Tao Hong, Yin Jie, Zhao Chunlin, Wu Haijun, Wu Jiagang
Department of Materials Science, Sichuan University, Chengdu 610064, China.
State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
ACS Appl Mater Interfaces. 2020 Nov 4;12(44):49822-49829. doi: 10.1021/acsami.0c15496. Epub 2020 Oct 20.
The influence of relaxor behavior on strain behavior is less investigated in potassium sodium niobate [(K, Na)NbO, KNN] ceramics. Here, we report novel phenomena in the temperature-dependent strain behavior with the electric field of KNN-based ceramics with relaxation characteristics. The strain temperature stability is electric field dependent below the threshold electric field: temperature-dependent strain can be effectively improved by increasing the applied electric fields, while it remains almost electric field independent above the threshold electric field. Such a macroscopic property change can be well consistent with the following microscopic domain structure evolution. Little voltage dependence is found above a certain voltage by employing voltage-dependent piezoresponse hysteresis loops and domain switching under different temperatures, implying the contribution of domain behavior to the change of strain. Ergodic polar nanoregions (PNRs) are induced by the high-density domain walls among nanodomains in the relaxor samples, as revealed by the atomic-resolution polarization mapping with Z-contrast. The facilitated domain switching due to the lowered energy barrier and nearly vanished polarization anisotropy based on the PNRs with nanoscale multiphase coexistence can promote the electric field compensation for temperature effect. This work demonstrates the contribution of relaxor behavior to the electric field dependence of strain temperature stability in KNN-based ceramics.
在铌酸钾钠[(K, Na)NbO₃, KNN]陶瓷中,弛豫行为对应变行为的影响研究较少。在此,我们报道了具有弛豫特性的KNN基陶瓷在电场作用下与温度相关的应变行为中的新现象。在阈值电场以下,应变温度稳定性与电场有关:通过增加施加电场可有效改善与温度相关的应变,而在阈值电场以上,应变几乎与电场无关。这种宏观性能变化与以下微观畴结构演化很好地一致。通过在不同温度下采用与电压相关的压电响应滞后回线和畴切换,发现在一定电压以上电压依赖性很小,这意味着畴行为对应变变化有贡献。如通过具有Z衬度的原子分辨率极化映射所揭示的,弛豫样品中纳米畴之间的高密度畴壁诱导了遍历性极性纳米区域(PNRs)。基于具有纳米级多相共存的PNRs,由于能量势垒降低和极化各向异性几乎消失而促进的畴切换可以促进电场对温度效应的补偿。这项工作证明了弛豫行为对KNN基陶瓷中应变温度稳定性的电场依赖性的贡献。