Xiong Puxian, Li Yuanyuan, Peng Mingying
The China-Germany Research Center for Photonic Materials and Device, The State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, The School of Physics and The School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
iScience. 2020 Sep 19;23(10):101578. doi: 10.1016/j.isci.2020.101578. eCollection 2020 Oct 23.
Bismuth (Bi)-doped materials are capable of exhibiting broadband near-infrared (NIR) luminescence in 1,000-1,700 nm; driven by the potential use in lasers and broadband optical amplifiers for modern fiber communication systems, Bi-activated NIR luminescencent glasses and related devices have attracted much attention. Compared with glass systems, Bi-doped crystals as gain media usually have more regular crystal structures to produce stronger NIR signals, and developing such materials is highly desirable. Regarding the recent advances in Bi-doped NIR crystals, here, for the first time, we summarized such crystals listed as two main categories of halogen and oxide compounds. Then, by comparing the substitution site, coordination environment, emission and excitation luminescence peaks, emitting center species, and decay times of these known Bibased NIR crystals, discussion on how to design Bi-doped NIR crystals is included. Finally, the key challenges and perspectives of Bi-doped NIR crystals are also presented. It is hoped that this review could offer inspiration for the further development of Bi-doped NIR luminescent crystals and exploit its potential applications.
铋（Bi）掺杂材料能够在1000 - 1700纳米范围内呈现宽带近红外（NIR）发光；受现代光纤通信系统中激光和宽带光放大器潜在应用的推动，铋激活的近红外发光玻璃及相关器件备受关注。与玻璃体系相比，作为增益介质的铋掺杂晶体通常具有更规则的晶体结构，以产生更强的近红外信号，开发此类材料非常必要。关于铋掺杂近红外晶体的最新进展，在此我们首次总结了此类晶体，分为卤化物和氧化物化合物两大类。然后，通过比较这些已知的铋基近红外晶体的取代位点、配位环境、发射和激发发光峰、发射中心物种以及衰减时间，对如何设计铋掺杂近红外晶体进行了讨论。最后，还介绍了铋掺杂近红外晶体的关键挑战和前景。希望这篇综述能为铋掺杂近红外发光晶体的进一步发展提供灵感，并开拓其潜在应用。
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