Cho Eunkyung, Liu Lei, Coropceanu Veaceslav, Brédas Jean-Luc
Department of Chemistry and Biochemistry, The University of Arizona, Tucson, Arizona 85721-0088, USA.
School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta Georgia 30332-0400, USA.
J Chem Phys. 2020 Oct 14;153(14):144708. doi: 10.1063/5.0028227.
The performance of organic light-emitting diodes based on thermally activated delayed fluorescence emitters depends on the efficiency of reverse intersystem crossing (RISC) processes, which are promoted by a small energy gap between the lowest singlet (S) and triplet (T) excited states and large spin-orbit couplings. Recently, it was proposed that the introduction of secondary donor units into 2,3,4,5,6-penta(9H-carbazol-9-yl)benzonitrile (5CzBN) can significantly increase the mixing between triplet states with charge-transfer (CT) and local-excitation characteristics and consequently increase the spin-orbit couplings. Here, the results of long-range corrected density functional theory calculations show that the main impact on the RISC rates of substituting 5CzBN with secondary donors is due to a decrease in adiabatic singlet-triplet energy gaps and intramolecular reorganization energies rather than to a change in spin-orbit couplings. Our calculations underline that at least two singlet and three triplet excited states contribute to the ISC/RISC processes in 5CzBN and its derivatives. In addition, we find that in all emitters, the lowest singlet excited-state potential energy surface has a double-minimum shape.
基于热激活延迟荧光发射体的有机发光二极管的性能取决于反向系间窜越(RISC)过程的效率,该过程由最低单重态(S)和三重态(T)激发态之间的小能隙以及大自旋-轨道耦合所促进。最近,有人提出将二级供体单元引入2,3,4,5,6-五(9H-咔唑-9-基)苯甲腈(5CzBN)中可显著增加具有电荷转移(CT)和局域激发特性的三重态之间的混合,从而增加自旋-轨道耦合。在此,长程校正密度泛函理论计算结果表明,用二级供体取代5CzBN对RISC速率的主要影响是由于绝热单重态-三重态能隙和分子内重组能的降低,而非自旋-轨道耦合的变化。我们的计算强调,至少两个单重态和三个三重态激发态对5CzBN及其衍生物中的ISC/RISC过程有贡献。此外,我们发现,在所有发射体中,最低单重态激发态势能面具有双极小形状。