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氧化物陶瓷中位错改性电导率的概念框架:以SrTiO₃为例对介观结构、核心和空间电荷进行解卷积

Conceptual Framework for Dislocation-Modified Conductivity in Oxide Ceramics Deconvoluting Mesoscopic Structure, Core, and Space Charge Exemplified for SrTiO.

作者信息

Porz Lukas, Frömling Till, Nakamura Atsutomo, Li Ning, Maruyama Ryohei, Matsunaga Katsuyuki, Gao Peng, Simons Hugh, Dietz Christian, Rohnke Marcus, Janek Jürgen, Rödel Jürgen

机构信息

Department of Materials and Earth Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany.

Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.

出版信息

ACS Nano. 2021 Jun 22;15(6):9355-9367. doi: 10.1021/acsnano.0c04491. Epub 2020 Nov 10.

DOI:10.1021/acsnano.0c04491
PMID:33169975
Abstract

The introduction of dislocations is a recently proposed strategy to tailor the functional and especially the electrical properties of ceramics. While several works confirm a clear impact of dislocations on electrical conductivity, some studies raise concern in particular when expanding to dislocation arrangements beyond a geometrically tractable bicrystal interface. Moreover, the lack of a complete classification on pertinent dislocation characteristics complicates a systematic discussion and hampers the design of dislocation-modified electrical conductivity. We proceed by mechanically introducing dislocations with three different mesoscopic structures into the model material single-crystal SrTiO and extensively characterizing them from both a mechanical as well as an electrical perspective. As a final result, a deconvolution of and enables us to obtain the complete picture of the effect of dislocations on functional properties, focusing here on electric properties.

摘要

引入位错是最近提出的一种调整陶瓷功能尤其是电学性能的策略。虽然有几项研究证实了位错对电导率有明显影响,但一些研究尤其在将位错排列扩展到几何上易于处理的双晶界面之外时引发了担忧。此外,缺乏对相关位错特征的完整分类使得系统讨论变得复杂,并阻碍了位错改性电导率的设计。我们通过机械方式将具有三种不同介观结构的位错引入模型材料单晶SrTiO₃,并从力学和电学角度对其进行广泛表征。最终结果是,对[具体内容缺失]进行反褶积使我们能够获得位错对功能特性影响的全貌,这里重点关注电学特性。

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