Li Huimin, Jiang Xiaohong, Wang Anzhen, Chu Xiaotian, Du Zuliang
Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials Science and Engineering, Henan University, Kaifeng, China.
Front Chem. 2020 Aug 25;8:669. doi: 10.3389/fchem.2020.00669. eCollection 2020.
In this study, the CuInS/ZnS core/shell quantum dots (QDs) were prepared via simple and environmentally friendly solvothermal synthesis and were used as phosphors for white light-emitting diodes (WLEDs). The surface defect of the CuInS core QDs were passivated by the ZnS shell by forming CuInS/ZnS core/shell QDs. By adjusting the Cu/In ratio and the nucleation temperature, the photoluminescence (PL) peak of the CuInS QDs was tunable in a range of 651-775 nm. After coating the ZnS layer and modifying oleic acid ligands, the PL quantum yield increased to 85.06%. The CuInS/ZnS QD powder thermal stability results showed that the PL intensity of the QDs remained 91% at 100°C for 10 min. High color rendering index values (CRI, 90) and correlated color temperature of 4360 K for the efficient WLEDs were fabricated using CuInS/ZnS QDs and (Ba,Sr)SiO:Eu as color converters in combination with a blue GaN light-emitting diode chip.
在本研究中，通过简单且环境友好的溶剂热合成法制备了CuInS/ZnS核壳量子点（QDs），并将其用作白光发光二极管（WLEDs）的荧光粉。通过形成CuInS/ZnS核壳量子点，ZnS壳层钝化了CuInS核量子点的表面缺陷。通过调节Cu/In比和成核温度，CuInS量子点的光致发光（PL）峰在651-775nm范围内可调。在包覆ZnS层并修饰油酸配体后，PL量子产率提高到85.06%。CuInS/ZnS量子点粉末的热稳定性结果表明，量子点在100°C下保持10分钟后，PL强度仍为91%。使用CuInS/ZnS量子点和(Ba,Sr)SiO:Eu作为颜色转换器，并结合蓝色GaN发光二极管芯片，制备出了高显色指数值（CRI，90）和相关色温为4360K的高效WLEDs。
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