Tu Yudi, Xu Yan, Li Junzi, Hao Qiaoyan, Liu Xiaosong, Qi Dianyu, Bao Chunxiong, He Tingchao, Gao Feng, Zhang Wenjing
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China.
Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden.
Small. 2020 Dec;16(52):e2005626. doi: 10.1002/smll.202005626. Epub 2020 Nov 30.
For next-generation Internet-of-Everything applications, for example, artificial-neural-network image sensors, artificial retina, visible light communication, on-chip light interconnection, and flexible devices, etc., high-performance microscale photodetectors are in urgent demands. 2D material (2DM) photodetectors have been researched and demonstrated impressive performances. However, they have not met the demands in filterless narrowband photoresponse, wide linear dynamic range (LDR), ultralow dark current, and large on/off ratio, which are key performances for these applications. 2D Ruddlesden-Popper perovskites (2D-RPPs) are recently highlighted photovoltaic and optoelectronic materials. Embedding ultrathin 2D-RPPs into 2DM photodetectors holds potentials to improve these performances. Herein, a single-crystalline ultrathin (PEA) PbI is integrated into a vertical-stacked graphene-(PEA) PbI -graphene micro photoconductor (V-PEPI-PC). V-PEPI-PC exhibits narrowband photoresponses at 517 nm with a full-width-at-half-maximum of 15 nm and a wide LDR of 122 dB. Due to the multiple quantum wells in (PEA) PbI , V-PEPI-PC demonstrates an ultralow dark current of 1.1 × 10 A (44 pA mm ), a high specific detectivity of 1.2 × 10 Jones, and a high on/off ratio of 1.6 × 10 . Owing to the short vertical channel, V-PEPI-PC shows a fast response rise time of 486 µs. Therefore, the vertical-stacked photodetectors based on hybrid 2D-RPPs and 2DMs may have great potentials in future optoelectronics.
例如,对于下一代万物互联应用,如人工神经网络图像传感器、人工视网膜、可见光通信、片上光互连和柔性设备等,高性能的微尺度光电探测器需求迫切。二维材料(2DM)光电探测器已得到研究并展现出令人印象深刻的性能。然而,它们尚未满足无滤光窄带光响应、宽线性动态范围(LDR)、超低暗电流和高开关比等要求,而这些是这些应用的关键性能。二维Ruddlesden-Popper钙钛矿(2D-RPPs)是最近备受关注的光伏和光电子材料。将超薄的2D-RPPs嵌入2DM光电探测器有望改善这些性能。在此,将单晶超薄(PEA)PbI集成到垂直堆叠的石墨烯-(PEA)PbI -石墨烯微光电导体(V-PEPI-PC)中。V-PEPI-PC在517 nm处呈现窄带光响应,半高宽为15 nm,宽线性动态范围为122 dB。由于(PEA)PbI中的多量子阱,V-PEPI-PC表现出1.1×10 A(44 pA/mm)的超低暗电流、1.2×10 Jones的高比探测率和1.6×10的高开关比。由于垂直通道较短,V-PEPI-PC的响应上升时间为486 µs,速度较快。因此,基于混合2D-RPPs和2DMs的垂直堆叠光电探测器在未来光电子学中可能具有巨大潜力。