School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006, China.
School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006, China.
J Hazard Mater. 2021 Apr 15;408:124621. doi: 10.1016/j.jhazmat.2020.124621. Epub 2020 Dec 9.
In this research, bismuth vanadate-doped graphite felt (GF-BiVO) was successfully prepared by sol-gel method, in which BiVO owned superior electro-Fenton (EF) and solar-photo-electro-Fenton (SPEF) performance. Combined with the analysis by X-ray diffractometer (XRD), field emission transmission electron microscopy (FE-TEM), nitrogen adsorption-desorption isotherms and cyclic voltammetry (CV), the changes of electrodes were reflected in structure and physicochemical properties. The doping of monoclinic BiVO endued GF with a higher surface area and more electro-active sites and better electrode activity in comparison to Raw-GF. Then, the GFs were used as cathodes to detect •OH concentration with coumarin (COU) as probe molecule and to evaluate photoelectric performance with ciprofloxacin (CIP) in photocatalysis, EF and SPEF processes. The results demonstrated that the concentration of •OH followed an order of SPEF> EF> photocatalysis, which was consistent with the removal rate of CIP (99.8%, 99.4% and 21.2%, respectively) on GF-BiVO at 5 min. Further, five degradation pathways of CIP in SPEF system were proposed including the attack on piperazine ring, oxidation on cyclopropyl group, decarboxylation and hydroxyl radical addition, oxidation on benzene group and defluorination. The study provides insights into the enhancement of EF and SPEF performance and the degradation pathway of CIP in SPEF.
在这项研究中,采用溶胶-凝胶法成功制备了五氧化二铋掺杂石墨毡(GF-BiVO),其中 BiVO 具有优越的电芬顿(EF)和太阳能光电芬顿(SPEF)性能。通过 X 射线衍射仪(XRD)、场发射透射电子显微镜(FE-TEM)、氮气吸附-脱附等温线和循环伏安法(CV)的分析,反映了电极结构和物理化学性质的变化。与原始 GF 相比,单斜 BiVO 的掺杂赋予 GF 更高的比表面积和更多的电活性位点,以及更好的电极活性。然后,将 GF 用作阴极,用香豆素(COU)作为探针分子检测 •OH 浓度,并在光催化、EF 和 SPEF 过程中用环丙沙星(CIP)评估光电性能。结果表明,•OH 的浓度顺序为 SPEF>EF>光催化,这与 5 分钟内 GF-BiVO 上 CIP 的去除率(分别为 99.8%、99.4%和 21.2%)一致。进一步提出了 SPEF 体系中 CIP 的五种降解途径,包括对哌嗪环的攻击、环丙基的氧化、脱羧和羟基自由基加成、苯环的氧化和脱氟。该研究为提高 EF 和 SPEF 性能以及 SPEF 中 CIP 的降解途径提供了新的见解。