Kim Bo Su, Ji Jae-Hoon, Kamiko Masao, Kim Seong Jin, Koh Jung-Hyuk
School of Electrical and Electronics Engineering, Chung-Ang University, 06974, Korea.
Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1978-1983. doi: 10.1166/jnn.2021.18914.
Figure of merit the product of piezoelectric charge constant and the piezoelectric voltage constant-d × g in piezoelectric energy harvesting systems are critical measures in energy harvester applications. It is difficult to achieve high figure of merit because of the interdependence of d and the relative dielectric constant, ε. Until now, the prohibitive amount of effort required to solve this problem has led to it being considered an unsolvable issue. Lead zirconate titanate ceramic, Pb(Zr,Ti)O₃, has been reported to exhibit high values of d and ε. However, to be employed as piezoelectric energy harvester, a candidate material is required to exhibit both high piezoelectric charge coefficient and high piezoelectric electric voltage coefficient simultaneously. To enhance the figure of merit of Pb(Zr,Ti)O₃-based materials, dopants have also been considered. Pb(Zn,Ni,Nb)O₃- added Pb(Zr,Ti)O₃, Pb(Zr,Ti)O₃-Pb(Zn,Ni,Nb)O₃ ceramic has been reported to exhibit a high d value of 561 pC/N. It's dielectric constant has also been reported to be low at 1898. In this study, Pb(Zr,Ti)O₃-Pb(Zn,Ni,Nb)O₃-Pb(In,Nb)O₃ was investigated in the context of enhancing the figure of merit of Pb(Zr,Ti)O₃-based materials. During the proposed process, we increased the corresponding figure of merit by adding Pb(In,Nb)O₃ material. Besides exhibiting a low dielectric constant, the Pb(In,Nb)O₃ material was also observed to exhibit high d × g as the proposed doping increased the value of d greatly, while maintaining the dielectric constant (Yan, J., et al., 2019. Large engancement of trans coefficient in PZT-PZN energy harvesting system through introducing low εPIN relaxor. , pp.2666-2672). Further, we conducted an optimization experiment by controlling the doping concentration and the sintering temperature.
在压电能量收集系统中，品质因数（压电电荷常数与压电电压常数的乘积 - d×g）是能量收集器应用中的关键指标。由于d与相对介电常数ε相互依存，很难实现高的品质因数。到目前为止，解决这个问题所需的巨大努力使得它被认为是一个无法解决的问题。据报道，锆钛酸铅陶瓷Pb(Zr,Ti)O₃具有高的d值和ε值。然而，要用作压电能量收集器，候选材料需要同时展现出高压电电荷系数和高压电电压系数。为了提高Pb(Zr,Ti)O₃基材料的品质因数，也考虑了掺杂剂。据报道，添加了Pb(Zn,Ni,Nb)O₃的Pb(Zr,Ti)O₃，即Pb(Zr,Ti)O₃ - Pb(Zn,Ni,Nb)O₃陶瓷具有561 pC/N的高d值。其介电常数据报道也较低，为1898。在本研究中，在提高Pb(Zr,Ti)O₃基材料品质因数的背景下对Pb(Zr,Ti)O₃ - Pb(Zn,Ni,Nb)O₃ - Pb(In,Nb)O₃进行了研究。在所提出的过程中，我们通过添加Pb(In,Nb)O₃材料提高了相应的品质因数。除了展现出低介电常数外，还观察到随着所提出的掺杂极大地提高了d值，同时保持介电常数不变，Pb(In,Nb)O₃材料也展现出高的d×g（Yan, J.,等人，2019年。通过引入低εPIN弛豫体在PZT - PZN能量收集系统中大幅提高传输系数。，第2666 - 2672页）。此外，我们通过控制掺杂浓度和烧结温度进行了优化实验。
