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少突胶质细胞对半乳糖脑苷脂抗体的再分布和内化作用。

Redistribution and internalization of antibodies to galactocerebroside by oligodendroglia.

作者信息

Dyer C A, Benjamins J A

机构信息

Department of Neurology, Wayne State University School of Medicine, Detroit, Michigan 48201.

出版信息

J Neurosci. 1988 Mar;8(3):883-91. doi: 10.1523/JNEUROSCI.08-03-00883.1988.

Abstract

Glial cultures from mouse brain were used to examine the direct interaction between oligodendroglia and antibodies to galactocerebroside (GalC). The external surface of oligodendroglial membrane sheets showed large GalC+ patches separated by a GalC- network after exposure to anti-GalC and fluoresceinated second antibody at 37 degrees C. However, the membrane sheets were evenly stained when cultures were fixed prior to staining or stained at 0 degrees C. Further, exposure to second antibody at 0 degrees C or to Fab fragments of second antibody at 37 degrees C also gave even staining. These results indicate that GalC is normally distributed evenly on the surface of oligodendroglial membrane sheets, but that redistribution or patching of GalC:anti-GalC complexes occurs by cross-linking with second antibody at 37 degrees C. Antibodies to GalC are internalized rapidly and specifically by oligodendroglia. This process is temperature-dependent, and, in contrast to patching, does not require the presence of second antibody. Internalized antibodies are seen within 1 min throughout oligodendroglial membrane sheets, then aggregate in the sheets and in large vein-like structures leading to the cell body. By 1 hr, the cell body is densely packed with vesicles containing anti-GalC. By 24 hr after a 10 min exposure to anti-GalC, internal antibody has disappeared. Anti-GalC is recycled to the cell surface within 5 min after exposure, and continues to appear on the surface for at least 4 hr after the pulse.

摘要

从小鼠脑分离的神经胶质细胞培养物用于研究少突胶质细胞与半乳糖脑苷脂(GalC)抗体之间的直接相互作用。在37℃下将少突胶质细胞膜片暴露于抗GalC和荧光素化二抗后,膜片外表面显示出被GalC阴性网络分隔的大的GalC阳性斑块。然而,在染色前固定培养物或在0℃下染色时,膜片被均匀染色。此外,在0℃下暴露于二抗或在37℃下暴露于二抗的Fab片段也产生均匀染色。这些结果表明,GalC通常均匀分布在少突胶质细胞膜片表面,但GalC:抗GalC复合物的重新分布或斑块形成是通过在37℃下与二抗交联而发生的。抗GalC抗体被少突胶质细胞快速且特异性地内化。这个过程是温度依赖性的,并且与斑块形成不同,不需要二抗的存在。内化的抗体在1分钟内可见于整个少突胶质细胞膜片,然后在膜片和通向细胞体的大静脉样结构中聚集。到1小时时,细胞体中密集地充满了含有抗GalC的囊泡。在暴露于抗GalC 10分钟后24小时,内化抗体消失。抗GalC在暴露后5分钟内循环到细胞表面,并在脉冲后至少4小时持续出现在表面。

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