Gao Lei, Chen Xiaokun, Lyu Xiangyu, Ji Guiping, Chen Zhanfen, Zhu Mingtong, Cao Xun, Li Chaorong, Ji Ailing, Cao Zexian, Lu Nianpeng
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
J Phys Condens Matter. 2021 Mar 10;33(10):104004. doi: 10.1088/1361-648X/abd1b7.
Ionic liquid gating (ILG) that drives the ions incorporate into or extract from the crystal lattice, has emerged as a new pathway to design materials. Although many intriguing emergent phenomena, novel physical properties and functionalities have been obtained, the gating mechanism governing the ion and charge transport remains unexplored. Here, by using the model system of brownmillerite SrCoO and the corresponding electric-field controlled tri-state phase transformation among the pristine SrCoO, hydrogenated HSrCoO and oxidized perovskite SrCoO through the dual ion switch, the ionic diffusion and electronic transport processes were carefully investigated. Through controlling gating experiment by design, we find out that the collaborative interaction between charge transport and ion diffusion plays an essential role to prompt the hydrogen or oxygen ions incorporate into the crystal lattice of SrCoO, and therefore leading to formation of new phases. At region closer to the electrode, the electron can shuttle more readily in (out) the material, correspondingly the incorporation of hydrogen (oxygen) ions and phase transformation is largely affiliated. With the compensated charge of electron as well as the reaction front gradually moving away from the electrode, the new phases would be developed successively across the entire thin film. This result unveils the underlying mechanism in the electric-field control of ionic incorporation and extraction, and therefore provides important strategy to achieve high efficient design of material functionalities in complex oxide materials.
离子液体门控(ILG)可驱动离子融入晶格或从晶格中析出,已成为一种设计材料的新途径。尽管已获得许多有趣的新兴现象、新颖的物理性质和功能,但控制离子和电荷传输的门控机制仍未得到探索。在此,通过使用钙钛矿型 SrCoO 的模型系统以及通过双离子开关在原始 SrCoO、氢化的 HSrCoO 和氧化的钙钛矿 SrCoO 之间进行的相应电场控制三态相变,对离子扩散和电子传输过程进行了仔细研究。通过设计控制门控实验,我们发现电荷传输与离子扩散之间的协同相互作用对于促使氢或氧离子融入 SrCoO 的晶格起着至关重要的作用,进而导致新相的形成。在靠近电极的区域,电子能够更轻松地穿梭进出材料,相应地,氢(氧)离子的融入和相变在很大程度上与之相关。随着电子的补偿电荷以及反应前沿逐渐远离电极,新相将在整个薄膜中相继形成。这一结果揭示了电场控制离子融入和析出的潜在机制,因此为在复杂氧化物材料中实现高效的材料功能设计提供了重要策略。