Gao Wanguo, Li Xiaoman, Zhang Xu, Su Senda, Luo Shijian, Huang Rong, Jing Yuan, Luo Min
State Key Laboratory of High-efficiency Utilization of Coal and Green Chemical Engineering, School of Chemistry and Chemical Engineering, Ningxia University, Yinchuan, Ningxia 750021, P.R. China.
Nanoscale. 2021 Apr 30;13(16):7801-7809. doi: 10.1039/d1nr00697e.
The vacancies of semiconductors have proven to be effective active sites for photocatalytic nitrogen fixation, but what about the role of defects in MOF materials? Herein, we report the first UiO-66 with photo-excited cluster defects and linker defects for photocatalytic nitrogen fixation. It was determined through the post-synthetic ligand exchange (PSE) process that the linker defects, rather than cluster defects, can greatly improve the performance, which is due to linker defects forming unsaturated metal nodes such as the vacancy in a semiconductor. Specifically, for photo-activated UiO-66, the NH4+ production rate was 196 and 68 μmol g-1 h-1 in air atmosphere under ultraviolet-visible (UV-Vis) and visible light, respectively. This report provides a new effective strategy to design efficient nitrogen fixation photocatalysts.
半导体的空位已被证明是光催化固氮的有效活性位点,但MOF材料中的缺陷又起什么作用呢?在此,我们报道了首例具有光激发簇缺陷和连接体缺陷的用于光催化固氮的UiO-66。通过后合成配体交换(PSE)过程确定,连接体缺陷而非簇缺陷可极大地提高性能,这是因为连接体缺陷形成了不饱和金属节点,如半导体中的空位。具体而言,对于光活化的UiO-66,在紫外-可见(UV-Vis)光和可见光下的空气气氛中,NH4+的产率分别为196和68 μmol g-1 h-1。本报告提供了一种设计高效固氮光催化剂的新有效策略。