Sarkar Ritabrata, Kar Moumita, Habib Md, Zhou Guoqing, Frauenheim Thomas, Sarkar Pranab, Pal Sougata, Prezhdo Oleg V
Department of Chemistry, University of Gour Banga, Malda 732103, India.
Department of Chemistry, Visva-Bharati University, Santiniketan 731235, India.
J Am Chem Soc. 2021 May 5;143(17):6649-6656. doi: 10.1021/jacs.1c02325. Epub 2021 Apr 24.
Carbon nanotubes (CNTs) are appealing candidates for solar and optoelectronic applications. Traditionally used as electron sinks, CNTs can also perform as electron donors, as exemplified by coupling with perylenediimide (PDI). To achieve high efficiencies, electron transfer (ET) should be fast, while subsequent charge recombination should be slow. Typically, defects are considered detrimental to material performance because they accelerate charge and energy losses. We demonstrate that, surprisingly, common CNT defects improve rather than deteriorate the performance. CNTs and other low dimensional materials accommodate moderate defects without creating deep traps. At the same time, charge redistribution caused by CNT defects creates an additional electrostatic potential that increases the CNT work function and lowers CNT energy levels relative to those of the acceptor species. Hence, the energy gap for the ET is decreased, while the gap for the charge recombination is increased. The effect is particularly important because charge acceptors tend to bind near defects due to enhanced chemical interactions. The time-domain simulation of the excited-state dynamics provides an atomistic picture of the observed phenomenon and characterizes in detail the electronic states, vibrational motions, inelastic and elastic electron-phonon interactions, and time scales of the charge separation and recombination processes. The findings should apply generally to low-dimensional materials, because they dissipate defect strain better than bulk semiconductors. Our calculations reveal that CNT performance is robust to common defects and that moderate defects are essential rather than detrimental for CNT application in energy, electronics, and related fields.
碳纳米管(CNTs)是太阳能和光电子应用中颇具吸引力的候选材料。传统上用作电子受体的碳纳米管,也可以作为电子供体,例如与苝二酰亚胺(PDI)耦合。为了实现高效率,电子转移(ET)应该快速,而随后的电荷复合应该缓慢。通常,缺陷被认为对材料性能有害,因为它们会加速电荷和能量损失。我们令人惊讶地证明,常见的碳纳米管缺陷会改善而不是恶化性能。碳纳米管和其他低维材料能够容纳适度的缺陷而不会产生深陷阱。同时,由碳纳米管缺陷引起的电荷重新分布会产生额外的静电势,相对于受体物种而言,这会增加碳纳米管的功函数并降低碳纳米管的能级。因此,电子转移的能隙减小,而电荷复合的能隙增加。由于增强的化学相互作用,电荷受体倾向于在缺陷附近结合,所以这种效应尤为重要。激发态动力学的时域模拟提供了所观察现象的原子图像,并详细表征了电子态、振动运动、非弹性和弹性电子 - 声子相互作用以及电荷分离和复合过程的时间尺度。这些发现应该普遍适用于低维材料,因为它们比体半导体更好地消散缺陷应变。我们的计算表明,碳纳米管性能对常见缺陷具有鲁棒性,并且适度的缺陷对于碳纳米管在能源、电子及相关领域的应用至关重要而非有害。