Xu Yuanqing, Wang Weibiao, Chen Zhexue, Sui Xinyu, Wang Aocheng, Liang Cheng, Chang Jinquan, Ma Yanhong, Song Luting, Jiang Wenyu, Zhou Jin, Liu Xinfeng, Zhang Yong
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
Nanoscale. 2021 May 7;13(17):8004-8011. doi: 10.1039/d0nr09067k. Epub 2021 Apr 15.
Mass production of semiconductor quantum dots (QDs) from bulk materials is highly desired but far from being satisfactory. Herein, we report a general strategy to mechanically tailor semiconductor bulk materials into QDs. Semiconductor bulk materials are routinely available via simple chemical precipitation. From their bulk materials, a variety of semiconductor (e.g., lead sulfide (PbS), cadmium sulfide (CdS), copper sulfide (CuS), ferrous sulfide (FeS), and zinc sulfide (ZnS)) QDs are successfully produced in high yields (>15 wt%). This is achieved by a combination of silica-assisted ball-milling and sonication-assisted solvent treatment. The as-produced QDs show intrinsic characteristics and outstanding water solubility (up to 5 mg mL), facilitating their practical applications. The QD dispersions present remarkable photoluminescence (PL) with exciton-dependence and nanosecond (ns)-scale lifetimes. The QDs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate exciting solid-state fluorescence and exceptional nonlinear saturation absorption (NSA). Absolute modulation depths of up to 58% and saturation intensities down to 0.40 MW cm were obtained. Our strategy could be applied to any semiconductor bulk materials and therefore paves the way for the construction of the complete library of semiconductor QDs.
人们迫切希望从块状材料大规模生产半导体量子点(QDs),但目前远未达到令人满意的程度。在此,我们报告了一种将半导体块状材料机械加工成量子点的通用策略。半导体块状材料通常可通过简单的化学沉淀获得。从它们的块状材料中,成功高产率(>15 wt%)地制备出了多种半导体(例如硫化铅(PbS)、硫化镉(CdS)、硫化铜(CuS)、硫化亚铁(FeS)和硫化锌(ZnS))量子点。这是通过二氧化硅辅助球磨和超声辅助溶剂处理相结合实现的。所制备的量子点具有固有特性和出色的水溶性(高达5 mg mL),便于其实际应用。量子点分散体表现出显著的光致发光(PL),具有激子依赖性和纳秒(ns)级寿命。量子点 - 聚甲基丙烯酸甲酯(PMMA)混合薄膜表现出令人兴奋的固态荧光和出色的非线性饱和吸收(NSA)。获得了高达58%的绝对调制深度和低至0.40 MW cm的饱和强度。我们的策略可以应用于任何半导体块状材料,因此为构建完整的半导体量子点库铺平了道路。