Yang Yue, Su Liang, Feng Nannan, Liu Anqi, Xing Xiaoxue, Lu Min, Yu William W
State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
College of Electronic Information Engineering, Changchun University, Changchun 130022, People's Republic of China.
Nanotechnology. 2021 May 25;32(33). doi: 10.1088/1361-6528/abff8c.
The unbalanced charge transport is always a key influencing factor on the device performance of quantum dot light-emitting diodes (QLEDs), particularly for the blue QLEDs due to their large optical band gap. Here, a method of electron transport layer (ETL) doping was developed to regulate the energy levels and the carrier mobility of the ETL, which resulted in more balanced charge injection, transport and recombination in the blue emitting CdZnS/ZnS core/shell QLEDs. Consequently, an enhanced performance of blue QLEDs was achieved by modulating the charge balance through ETL doping. The maximum external quantum efficiency and luminance was dramatically increased from 2.2% to 7.3% and from 3786 cd mto 9108 cd m, respectively. The results illustrate that charge transport layer doping is a simple and effective strategy to regulate the charge injection barrier and carrier mobility of QLEDs.
电荷传输不平衡一直是影响量子点发光二极管（QLED）器件性能的关键因素，对于蓝光QLED尤其如此，因为其具有较大的光学带隙。在此，开发了一种电子传输层（ETL）掺杂方法来调节ETL的能级和载流子迁移率，这使得蓝光发射的CdZnS/ZnS核壳型QLED中的电荷注入、传输和复合更加平衡。因此，通过ETL掺杂调节电荷平衡，实现了蓝光QLED性能的提升。最大外量子效率和亮度分别从2.2%显著提高到7.3%，从3786 cd/m²提高到9108 cd/m²。结果表明，电荷传输层掺杂是调节QLED电荷注入势垒和载流子迁移率的一种简单有效的策略。
