Song Xianglian, Dereshgi Sina Abedini, Palacios Edgar, Xiang Yuanjiang, Aydin Koray
Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States.
International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen 518060, China.
ACS Appl Mater Interfaces. 2021 Jun 2;13(21):25224-25233. doi: 10.1021/acsami.1c00696. Epub 2021 May 19.
Hexagonal boron nitride (h-BN) is regarded as a milestone in the investigation of light interaction with phonon polaritons in two-dimensional van der Waals materials, showing significant potential in novel and high-efficient photonics devices in the mid-infrared region. Here, we investigate a structure composed of Au-grating arrays fabricated onto a Fabry-Perot (FP) cavity composed of h-BN, Ge, and Au back-reflector layers. The plasmonic FP cavity reduces the required device thickness by enhancing modal interactions and introduces in-plane polarization sensitivity based on the Au array lattice. Our experiments show multiple absorption peaks of over 90% in the mid-infrared region and the band stop filters with 80% efficiency using only a 15 nm h-BN slab. Moreover, mode interaction with experimental coupling strengths as high as 10.8 meV in the mid-infrared region is investigated. In particular, the interaction and hybridization of optical phonon modes with plasmonic modes including the lattice and cavity modes are studied. Anticrossing splitting ascribed to the coupling of optical phonons to plasmonic modes can be tuned by the designed geometry which can be tailored to efficient response band engineering for infrared photonics. We also show that in practical applications involving wet transfer of h-BN thin films, the contribution of minor optical phonon modes to resonant peaks should not be ignored, which originate from defects and multicrystallinity in the h-BN slab. Our findings provide a favorable complement to manipulation of light-phonon interaction, inspiring a promising design of phonon-based nanophotonic devices in the infrared range.
六方氮化硼(h-BN)被视为二维范德华材料中光与声子极化激元相互作用研究的一个里程碑,在中红外区域的新型高效光子器件中显示出巨大潜力。在此,我们研究了一种结构,该结构由金光栅阵列制成,该阵列被制备在由h-BN、锗和金背反射层组成的法布里-珀罗(FP)腔上。等离子体FP腔通过增强模式相互作用降低了所需的器件厚度,并基于金阵列晶格引入了面内偏振灵敏度。我们的实验表明,在中红外区域有多个吸收率超过90%的吸收峰,并且仅使用15纳米厚的h-BN平板就能实现效率为80%的带阻滤波器。此外,还研究了中红外区域实验耦合强度高达10.8毫电子伏特的模式相互作用。特别地,研究了光学声子模式与包括晶格模式和腔模式在内的等离子体模式的相互作用和杂化。归因于光学声子与等离子体模式耦合的反交叉分裂可以通过设计的几何结构进行调节,该几何结构可以定制用于红外光子学的高效响应带工程。我们还表明,在涉及h-BN薄膜湿法转移的实际应用中,源自h-BN平板中的缺陷和多晶性的次要光学声子模式对共振峰的贡献不应被忽略。我们的研究结果为光-声子相互作用的操纵提供了有利补充,为红外范围内基于声子的纳米光子器件带来了有前景的设计思路。