Dickenson John C, Haley MacKenzie E, Hyde Jacob T, Reid Zachary M, Tarring Travis J, Iovan Diana A, Harrison Daniel P
Virginia Military Institute, Department of Chemistry, Lexington, Virginia 24450, United States.
Virginia Tech, Department of Chemistry, Blacksburg, Virginia 24060, United States.
Inorg Chem. 2021 Jul 5;60(13):9956-9969. doi: 10.1021/acs.inorgchem.1c01233. Epub 2021 Jun 23.
Homoleptic transition-metal complexes of 2,2':6',2″-terpyridine () and substituted derivatives of the form [M()] display a wide range of redox potentials that correlate well to the Hammett parameter of the terpy substituents. Less is known about the impact of incorporating a phenyl spacer between the functional group responsible for controlling the electron density of terpy and how that translates to metal complexes of the form [M()], where M = Mn, Fe, Co, Ni, and Zn. Herein, we report our studies on these complexes revealed a good correlation of redox potentials of both metal- and ligand-centered events with the Hammett parameters of the aryl substituents, regardless of aryl-substitution pattern (i.e., the presence of multiple functional groups, combinations of withdrawing and donating functional groups). The phenyl spacer results in 60-80% attenuation of electron density as compared to the 4'-substituted terpy analogue, depending on the metal and redox couple analyzed. Density functional theory calculations performed on a simple model system revealed a strong correlation between the Hammett parameters and lowest unoccupied molecular orbital energies of the corresponding substituted pyridine models, thus serving as an inexpensive predictive tool when coupled with electrochemical data. Overall, these data suggest that such ligand modifications may be used in combination with previous approaches to further fine-tune the redox potentials of homoleptic transition-metal complexes, which may have applications in photochemical and electrochemical catalytic processes.
2,2':6',2″-三联吡啶( )的同配过渡金属配合物以及[M( )]形式的取代衍生物展现出广泛的氧化还原电位,这些电位与三联吡啶取代基的哈米特参数具有良好的相关性。对于在负责控制三联吡啶电子密度的官能团之间引入苯基间隔基的影响以及这如何转化为[M( )]形式的金属配合物(其中M = Mn、Fe、Co、Ni和Zn),人们了解较少。在此,我们报告对这些配合物的研究,结果表明,无论芳基取代模式如何(即存在多个官能团、吸电子和供电子官能团的组合),以金属为中心和以配体为中心的氧化还原事件的氧化还原电位与芳基取代基的哈米特参数都具有良好的相关性。与4'-取代的三联吡啶类似物相比,苯基间隔基导致电子密度衰减60 - 80%,这取决于所分析的金属和氧化还原对。在一个简单模型系统上进行的密度泛函理论计算表明,哈米特参数与相应取代吡啶模型的最低未占据分子轨道能量之间存在很强的相关性,因此与电化学数据结合时可作为一种低成本的预测工具。总体而言,这些数据表明,此类配体修饰可与先前的方法结合使用,以进一步微调同配过渡金属配合物的氧化还原电位,这可能在光化学和电化学催化过程中有应用。