Udovytska Ruslana, Chulkin Pavel, Wypych-Puszkarz Aleksandra, Jung Jaroslaw
Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland.
Faculty of Chemistry, Silesian University of Technology, Strzody 9 str., 44-100 Gliwice, Poland.
Polymers (Basel). 2021 Jun 2;13(11):1853. doi: 10.3390/polym13111853.
The article describes three different ways of polymer light-emitting diode (PLED) degradation, caused by damage of the protective layer. The electroluminescence and charge-transport properties of a completely encapsulated diode, the diodes with a leaky protective layer and diodes without encapsulation were compared under long-time exploitation. The studied devices incorporated Super Yellow light-emitting poly-(1,4-phenylenevinylene) PPV copolymer as an electroluminescence component, and (poly-(3,4-ethylenedioxythiophene)-poly-(styrene sulfonate) (PEDOT:PSS) as a charge-transport layer between the indium tin oxide (ITO) anode and aluminum-calcium cathode. To analyze the PLED degradation mechanism regarding charge transport, impedance spectroscopy was used. The values of resistance and capacitance of the internal layers revealed an effect of applied voltage on charge carrier injection and recombination. The factors responsible for the device degradation were analyzed on a macromolecular level by comparing the plots of voltage dependence of resistance and capacitance at different operation times elapsed.
本文描述了由保护层损坏导致的聚合物发光二极管(PLED)降解的三种不同方式。在长期使用条件下,对完全封装的二极管、具有泄漏保护层的二极管和未封装的二极管的电致发光和电荷传输特性进行了比较。所研究的器件采用超黄色发光聚(1,4 - 亚苯基亚乙烯基)PPV共聚物作为电致发光组件,并采用(聚(3,4 - 乙撑二氧噻吩)- 聚(苯乙烯磺酸盐)(PEDOT:PSS)作为氧化铟锡(ITO)阳极和铝 - 钙阴极之间的电荷传输层。为了分析与电荷传输相关的PLED降解机制,使用了阻抗谱。内层的电阻和电容值揭示了施加电压对电荷载流子注入和复合的影响。通过比较不同运行时间下电阻和电容的电压依赖性曲线,在大分子水平上分析了导致器件降解的因素。