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用于5G应用的采用改进型导数叠加线性化技术的新型24GHz上变频混频器的设计与分析

Design and Analysis of a Novel 24 GHz Up-Conversion Mixer with Improved Derivative Super-Position Linearizer Technique for 5G Applications.

作者信息

Siddique Abrar, Delwar Tahesin Samira, Behera Prangyadarsini, Biswal Manas Ranjan, Haider Amir, Ryu Jee-Youl

机构信息

Department of Smart Robot Convergence and Application Engineering, Pukyong National University, Busan 48513, Korea.

Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Korea.

出版信息

Sensors (Basel). 2021 Sep 12;21(18):6118. doi: 10.3390/s21186118.

Abstract

A 24 GHz high linear, high-gain up-conversion mixer is realized for fifth-generation (5G) applications in the 65 nm CMOS process. The mixer's linearity is increased by applying an Improved Derivative Super-Position (I-DS) technique cascaded between the mixer's transconductance and switching stage. The high gain and stability of amplifiers in the transconductance stage of the mixer are achieved using novel tunable capacitive cross-coupled common source (TCC-CS) transistors. Using the I-DS, the third-order non-linear coefficient of current is closed to zero, enhancing the linearity. Additionally, a TCC-CS, which is realized by varactors, neutralizes the gate-to-drain parasitic capacitance (C) of transistors in the transconductance stage of the mixer and contributes to the improvement of the gain and stability of the mixer. The measured 1 dB compression point OPdB of the designed mixer is 4.1 dBm and IPdB is 0.67 dBm at 24 GHz. The conversion gain of 4.1 dB at 24 GHz and 3.2 ± 0.9 dB, from 20 to 30 GHz is achieved in the designed mixer. Furthermore, a noise figure of 3.8 dB is noted at 24 GHz. The power consumption of the mixer is 4.9 mW at 1.2 V, while the chip area of the designed mixer is 0.4 mm2.

摘要

采用65纳米互补金属氧化物半导体(CMOS)工艺实现了一款用于第五代(5G)应用的24吉赫兹高线性、高增益上变频混频器。通过在混频器的跨导和开关级之间级联应用改进型导数叠加(I-DS)技术,提高了混频器的线性度。混频器跨导级放大器的高增益和稳定性是通过使用新型可调谐电容交叉耦合共源(TCC-CS)晶体管实现的。利用I-DS,电流的三阶非线性系数接近于零,从而提高了线性度。此外,由变容二极管实现的TCC-CS抵消了混频器跨导级晶体管的栅极至漏极寄生电容(C),有助于提高混频器的增益和稳定性。所设计混频器在24吉赫兹时测得的1分贝压缩点OPdB为4.1分贝毫瓦,输入三阶截点IPdB为0.67分贝毫瓦。所设计混频器在24吉赫兹时的转换增益为4.1分贝,在20至30吉赫兹范围内为3.2±0.9分贝。此外,在24吉赫兹时测得的噪声系数为3.8分贝。混频器在1.2伏电压下的功耗为4.9毫瓦,而所设计混频器的芯片面积为0.4平方毫米。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c83a/8471453/4e8ce24532d9/sensors-21-06118-g001.jpg

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