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氧化物添加剂对SrBiTiO高温压电陶瓷相结构和电学性能的影响

Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBiTiO High-Temperature Piezoelectric Ceramics.

作者信息

Wang Shaozhao, Zhou Huajiang, Wu Daowen, Li Lang, Chen Yu

机构信息

School of Mechanical Engineering, Chengdu University, Chengdu 610106, China.

Key Laboratory of Deep Earth Science and Engineering, Ministry of Education, Sichuan University, Chengdu 610065, China.

出版信息

Materials (Basel). 2021 Oct 19;14(20):6227. doi: 10.3390/ma14206227.

Abstract

In this work, SrBiTiO (SBT) high-temperature piezoelectric ceramics with the addition of different oxides (GdO, CeO, MnO and CrO) were fabricated by a conventional solid-state reaction route. The effects of oxide additives on the phase structures and electrical properties of the SBT ceramics were investigated. Firstly, X-ray diffraction analysis revealed that all these oxides-modified SBT ceramics prepared presented a single SrBiTiO phase with orthorhombic symmetry and space group of 21, the change in cell parameters indicated that these oxide additives had diffused into the crystalline lattice of SBT and formed solid solutions with it. The SBT ceramics with the addition of MnO achieved a high relative density of up to 97%. The temperature dependence of dielectric constant showed that the addition of GdO could increase the of SBT. At a low frequency of 100 Hz, those dielectric loss peaks appearing around 500 °C were attributed to the space-charge relaxation as an extrinsic dielectric response. The synergetic doping of CeO and CrO could reduce the space-charge-induced dielectric relaxation of SBT. The piezoelectricity measurement and electro-mechanical resonance analysis found that CrO can significantly enhance both and of SBT, and produce a higher phase-angle maximum at resonance. Such an enhanced piezoelectricity was attributed to the further increased orthorhombic distortion after Ti at B-site was substituted by Cr. Among these compositions, SrGdBiTiO + 0.2 wt% CrO (SGBT-Cr) presented the best electrical properties including = 555 °C, 0.4%, = 6.35% and = 28 pC/N, as well as a good thermally-stable piezoelectricity that the value of was decreased by only 3.6% after being annealed at 500 °C for 4 h. Such advantages provided this material with potential applications in the high-stability piezoelectric sensors operated below 500 °C.

摘要

在本工作中,通过传统的固态反应路线制备了添加不同氧化物(Gd₂O₃、CeO₂、MnO₂和Cr₂O₃)的SrBi₄Ti₄O₁₅(SBT)高温压电陶瓷。研究了氧化物添加剂对SBT陶瓷相结构和电学性能的影响。首先,X射线衍射分析表明,所有这些氧化物改性的SBT陶瓷均呈现出具有正交对称性和空间群Pbnm的单一SrBi₄Ti₄O₁₅相,晶胞参数的变化表明这些氧化物添加剂已扩散到SBT的晶格中并与之形成固溶体。添加MnO₂的SBT陶瓷实现了高达97%的高相对密度。介电常数的温度依赖性表明,添加Gd₂O₃可提高SBT的居里温度。在100 Hz的低频下,那些在500℃左右出现的介电损耗峰归因于作为非本征介电响应的空间电荷弛豫。CeO₂和Cr₂O₃的协同掺杂可降低SBT的空间电荷诱导介电弛豫。压电测量和机电共振分析发现,Cr₂O₃可显著提高SBT的d₃₃和kₚ,并在共振时产生更高的最大相角。这种增强的压电性归因于B位Ti被Cr取代后正交畸变的进一步增加。在这些组合物中,Sr₀.₉Gd₀.₁Bi₄Ti₄O₁₅ + 0.2 wt% Cr₂O₃(SGBT-Cr)表现出最佳的电学性能,包括Tc = 555℃、Pr = 0.4 μC/cm²、kₚ = 6.35%和d₃₃ = 28 pC/N,以及良好的热稳定压电性,在500℃下退火4 h后,d₃₃值仅降低3.6%。这些优点使该材料在500℃以下工作的高稳定性压电传感器中具有潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/698b/8539863/825d0eb77b2a/materials-14-06227-g001.jpg

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