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具有铁电氧化铪的高性能自供电光传感及可重构热释电光存储器

High-Performing Self-Powered Photosensing and Reconfigurable Pyro-photoelectric Memory with Ferroelectric Hafnium Oxide.

作者信息

Kumar Mohit, Seo Hyungtak

机构信息

Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea.

Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea.

出版信息

Adv Mater. 2022 Feb;34(5):e2106881. doi: 10.1002/adma.202106881. Epub 2021 Dec 3.

DOI:10.1002/adma.202106881
PMID:34725878
Abstract

With highly diverse multifunctional properties, hafnium oxide (HfO ) has attracted considerable attention not only because of its potential to address fundamental questions about material behaviors, but also its potential for applied perspectives like ferroelectric memory, transistors, and pyroelectric sensors. However, effective harvesting of the pyro-photoelectric effect of HfO to develop high-performing self-biased photosensors and electric writable and optical readable memory has yet to be developed. Here, a proof-of-concept HfO -based self-powered and ultrafast (response time ≈ 60 µs) infrared pyroelectric sensor with a responsivity of up to 68 µA W is developed. In particular, temporal infrared light illumination induced surface heating and, in turn, change in spontaneous polarization are attributed to robust pyro-photocurrent generation. Further, controllable suspension and reestablishment of the self-biased pyro-photocurrent response with a short electric pulse are demonstrated, which offers a conceptually new kind of photoreadable memory. Potentially, the novel approach opens a new avenue for designing on-demand pyro-phototronic response over a desired area and offers the opportunity to utilize it for various applications, including memory storage, neuromorphic vision sensors, classification, and emergency alert systems.

摘要

氧化铪(HfO )具有高度多样的多功能特性,不仅因其有潜力解决有关材料行为的基本问题而备受关注,还因其在铁电存储器、晶体管和热释电传感器等应用方面的潜力而受到重视。然而,有效利用氧化铪的热光电效应来开发高性能自偏置光电传感器以及电写入和光读取存储器的工作尚未开展。在此,开发了一种基于氧化铪的概念验证型自供电超快(响应时间约为60微秒)红外热释电传感器,其响应度高达68微安/瓦。特别地,时间上的红外光照射会引起表面加热,进而导致自发极化的变化,这被认为是产生强大热光电流的原因。此外,还展示了通过短电脉冲可控地暂停和重新建立自偏置热光电流响应,这提供了一种概念上全新的光可读存储器。该新方法有可能为在所需区域设计按需热光电子响应开辟一条新途径,并为将其用于包括存储器存储、神经形态视觉传感器以及分类和应急警报系统在内的各种应用提供机会。

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