Wategaonkar Sandeep B, Parale Vinayak G, Mali Sawanta S, Hong Chang-Kook, Pawar Rani P, Maldar Parvejha S, Moholkar Annasaheb V, Park Hyung-Ho, Sargar Balasaheb M, Mane Raghunath K
Department of Chemistry, Sanjay Ghodawat Polytechnic, Atigre 416118, Maharashtra, India.
DST-FIST Sponsored Material Research Laboratory, Department of Chemistry, Jaysingpur College, Shivaji University, Kolhapur 416001, Maharashtra, India.
Materials (Basel). 2021 Oct 21;14(21):6282. doi: 10.3390/ma14216282.
The one-step hydrothermal method was used to synthesize Sn-doped TiO (Sn-TiO) thin films, in which the variation in Sn content ranged from 0 to 7-wt % and, further, its influence on the performance of a dye-sensitized solar cell (DSSC) photoanode was studied. The deposited samples were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, which confirmed the existence of the rutile phase of the synthesized samples with crystallite size ranges in between 20.1 to 22.3 nm. In addition, the bare and Sn-TiO thin films showed nanorod morphology. A reduction in the optical band gap from 2.78 to 2.62 eV was observed with increasing Sn content. The X-ray photoelectron spectroscopy (XPS) analysis confirmed Sn was successfully replaced at the Ti site. The 3-wt % Sn-TiO based DSSC showed the optimum efficiency of 4.01%, which was superior to 0.87% of bare and other doping concentrations of Sn-TiO based DSSCs. The present work reflects Sn-TiO as an advancing material with excellent capabilities, which can be used in photovoltaic energy conversion devices.
采用一步水热法合成了Sn掺杂的TiO（Sn-TiO）薄膜，其中Sn含量的变化范围为0至7 wt%，并进一步研究了其对染料敏化太阳能电池（DSSC）光阳极性能的影响。通过X射线衍射（XRD）和拉曼光谱对沉积样品进行分析，证实了合成样品中金红石相的存在，其微晶尺寸范围在20.1至22.3 nm之间。此外，裸Sn-TiO薄膜呈现纳米棒形态。随着Sn含量的增加，观察到光学带隙从2.78 eV降低到2.62 eV。X射线光电子能谱（XPS）分析证实Sn成功取代了Ti位点。基于3 wt% Sn-TiO的DSSC显示出4.01%的最佳效率，优于基于裸Sn-TiO和其他掺杂浓度的DSSC的0.87%。目前的工作表明Sn-TiO是一种具有优异性能的先进材料，可用于光伏能量转换器件。
