Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India; Electro Organic and Materials Electrochemistry Division, CSIR - Central Electrochemical Research Institute, Karaikudi 630003, Tamil Nadu, India.
Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India; Electro Organic and Materials Electrochemistry Division, CSIR - Central Electrochemical Research Institute, Karaikudi 630003, Tamil Nadu, India.
J Colloid Interface Sci. 2022 Feb 15;608(Pt 3):2482-2492. doi: 10.1016/j.jcis.2021.10.172. Epub 2021 Oct 30.
Here, cobalt-doped copper bismuth oxide (Co-CuBiO) was synthesized via a facile hydrothermal method for photoelectrocatalytic (PEC) hydrogen production. The results disclosed that the 5% Co-doped CuBiO has better PEC activity which is ∼3 fold higher than pristine CuBiO. The doping of cobalt in CuBiO improves the interfacial charge transfer at an electrode/electrolyte interface and reduces the recombination rate of photogenerated electron-hole pairs. This higher performed 5% Co-doped CuBiO photocathode further modified with TiO-P25 to form a Co-CuBiO/TiO p-n heterojunction. This Co-CuBiO/TiO photocathode displayed a photocurrent density of 330 μA cm at +0.5 V vs. RHE which was ∼2 fold higher than Co-CuBiO. Because this p-n junction affords inner electric field in the space charge region that helps for further minimization of electron-hole recombination, which facilitate efficient charge separation and transport thereby enhance the PEC water reduction.
本文采用简便的水热法合成了钴掺杂铜铋氧化物(Co-CuBiO),用于光电催化(PEC)制氢。结果表明,5%钴掺杂的 CuBiO 具有更好的 PEC 活性,约是原始 CuBiO 的 3 倍。钴在 CuBiO 中的掺杂提高了电极/电解质界面处的界面电荷转移效率,并降低了光生电子-空穴对的复合速率。经过 TiO-P25 进一步修饰的高性能 5%钴掺杂 CuBiO 光阴极形成了 Co-CuBiO/TiO p-n 异质结。该 Co-CuBiO/TiO 光阴极在相对于 RHE 的+0.5 V 时表现出 330 μA cm 的光电流密度,约是 Co-CuBiO 的 2 倍。由于这种 p-n 结在空间电荷区提供了内电场,有助于进一步最小化电子-空穴复合,从而促进了有效的电荷分离和传输,从而增强了 PEC 水还原。