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基于二维磁性半导体CrI的光螺旋度探测器。

Light helicity detector based on 2D magnetic semiconductor CrI.

作者信息

Cheng Xing, Cheng Zhixuan, Wang Cong, Li Minglai, Gu Pingfan, Yang Shiqi, Li Yanping, Watanabe Kenji, Taniguchi Takashi, Ji Wei, Dai Lun

机构信息

State Key Lab for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.

Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.

出版信息

Nat Commun. 2021 Nov 25;12(1):6874. doi: 10.1038/s41467-021-27218-3.

Abstract

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI and paves the way to developing spin-optoelectronic devices.

摘要

二维磁性半导体为在原子级薄极限下研究物理现象提供了一个平台,并有望应用于磁光电子器件。在此,我们报道了基于石墨烯-CrI-石墨烯范德华异质结构的光螺旋度探测器。我们研究了单层和多层CrI器件在各种磁场下的圆偏振光激发电流和反射磁圆二色性(RMCD)。这些器件表现出由CrI的磁状态决定的清晰的螺旋度选择性光响应行为。我们还在单层和多层CrI中都发现了在较高偏压下的异常负光电流。针对这一现象提出了一种可能的解释。我们的工作揭示了CrI中磁性能和光电性能之间的相互作用,并为开发自旋光电子器件铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/86fa/8617301/9caad86a2668/41467_2021_27218_Fig1_HTML.jpg

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