Zhang Pu, Huang Haijin, Jiang Yongheng, Han Xu, Xiao Huifu, Frigg Andreas, Nguyen Thach G, Boes Andreas, Ren Guanghui, Su Yikai, Tian Yonghui, Mitchell Arnan
Opt Lett. 2021 Dec 1;46(23):5986-5989. doi: 10.1364/OL.446222.
Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach-Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of , but also avoids the direct etching of thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼20. Moreover, the 3 dB EO bandwidth is ∼30, while the modulated data rate for on-off key signals can reach up to 80 Gbps.
电光（EO）调制器可将信号从电域转换到光域，在现代光通信系统中起着关键作用。绝缘体上铌酸锂（LNOI）技术已成为实现高性能集成电光调制器的一种有竞争力的解决方案。在本信函中，我们设计并通过实验展示了一种基于马赫-曾德尔干涉仪的调制器，该调制器位于加载氮化硅的LNOI平台上，它不仅充分利用了铌酸锂出色的电光效应，还避免了对铌酸锂薄膜的直接蚀刻。所制备调制器的测量半波电压长度积为2.24 V·cm，消光比约为20。此外，3 dB电光带宽约为30，而开关键控信号的调制数据速率可达80 Gbps。
