Ding Li-Ping, Shao Peng, Ding Feng
Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea.
Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China.
ACS Nano. 2021 Dec 28;15(12):19387-19393. doi: 10.1021/acsnano.1c05810. Epub 2021 Dec 3.
The seamless coalescence of parallelly aligned 2D materials is the primary route toward the synthesis of wafer-scale single crystals (WSSCs) of 2D materials. The epitaxial growth of various 2D materials on a single-crystal substrate, which is an essential condition of the seamless coalescence approach, has been extensively explored in previous studies. Here, by using hexagonal boron nitride (hBN) growth on a liquid gold surface as an example, we demonstrate that growth of WSSCs of 2D materials the seamless coalescence of self-aligned 2D islands on a liquid substrate is possible. Here we show that, in the presence of hydrogen, all the hBN edges tend to be hydrogen terminated and the coalescence of hBN islands occurs only if their crystallographic lattices of neighboring hBN islands are aligned parallelly. The mechanism of hBN self-alignment revealed in this study implies that, under the optimum experimental condition, the seamless coalescence of 2D materials on a liquid substrate is possible and thus provides guidance for synthesizing WSSCs of various 2D materials by using liquid phase substrates.
平行排列的二维材料的无缝合并是合成二维材料晶圆级单晶(WSSCs)的主要途径。在单晶衬底上外延生长各种二维材料是无缝合并方法的一个基本条件,此前的研究已对其进行了广泛探索。在此,以在液态金表面生长六方氮化硼(hBN)为例,我们证明了二维材料WSSCs的生长——二维岛在液体衬底上的自对准无缝合并是可能的。我们在此表明,在有氢存在的情况下,所有hBN边缘倾向于被氢终止,并且只有当相邻hBN岛的晶格平行排列时,hBN岛才会发生合并。本研究中揭示的hBN自对准机制表明,在最佳实验条件下,二维材料在液体衬底上的无缝合并是可能的,从而为使用液相衬底合成各种二维材料的WSSCs提供了指导。