Rabchinskii Maxim K, Sysoev Victor V, Ryzhkov Sergei A, Eliseyev Ilya A, Stolyarova Dina Yu, Antonov Grigorii A, Struchkov Nikolai S, Brzhezinskaya Maria, Kirilenko Demid A, Pavlov Sergei I, Palenov Mihail E, Mishin Maxim V, Kvashenkina Olga E, Gabdullin Pavel G, Varezhnikov Alexey S, Solomatin Maksim A, Brunkov Pavel N
Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia.
Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia.
Nanomaterials (Basel). 2021 Dec 24;12(1):45. doi: 10.3390/nano12010045.
Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials.
对石墨烯进行衍生化以调控其物理和化学性质或克服纳米石墨烯简易合成的问题，是纳米材料研究领域备受关注的课题。在本文中，我们提出了一种通过对氧化石墨烯（GO）进行两步液相处理来合成硫醇化石墨烯的简便且可扩展的方法。采用核心能级方法，表明引入了高达5.1原子百分比的硫醇，同时碳/氧比提高到了16.8。微观和拉曼研究指出，硫醇化后石墨烯层发生褶皱但无穿孔。结果表明，硫醇化石墨烯的电导由莫特跳跃机制驱动，薄层电阻值为2.15 kΩ/sq，且依赖于环境。展示了这些薄膜在与干燥和潮湿空气混合的乙醇蒸气暴露下的化学电阻效应的初步结果。最后，分析了硫醇化石墨烯的功函数值和价带结构。综上所述，所开发的方法以及硫醇化石墨烯的形态和物理特性研究结果，为这种衍生物在能量存储、传感装置和智能材料中的进一步应用提供了指导。
