Ding Kan, Li Yongxi, Forrest Stephen R
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States.
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States.
ACS Appl Mater Interfaces. 2022 Feb 2;14(4):5692-5698. doi: 10.1021/acsami.1c17943. Epub 2022 Jan 21.
The thermal stability of inverted, halogen-rich non-fullerene acceptor (NFA)-based organic photovoltaics with MoO as the hole transporting layer is studied at temperatures up to 80 °C. Over time, the power conversion efficiency shows a "check-mark" shaped thermal aging pattern, featuring an early decrease, followed by a long-term recovery. A high Cl concentration at the bulk heterojunction (BHJ)/MoO interface in the thermally aged device is found using energy dispersive X-ray spectroscopy. X-ray photoelectron spectroscopy shows that the MoO is chlorinated after thermal aging. With bulk quantum efficiency analysis, we propose an explanation to the check-mark shaped pattern. Inserting a thin C layer between the BHJ and MoO suppresses the thermal degradation mechanisms, resulting in three orders of magnitude increase in device lifetime at 80 °C.
研究了以MoO作为空穴传输层的倒置、富卤非富勒烯受体(NFA)基有机光伏器件在高达80°C温度下的热稳定性。随着时间的推移,功率转换效率呈现出“对勾”形的热老化模式,其特点是早期下降,随后长期恢复。利用能量色散X射线光谱法发现,热老化器件的本体异质结(BHJ)/MoO界面处存在高浓度的Cl。X射线光电子能谱表明,热老化后MoO被氯化。通过体量子效率分析,我们对“对勾”形模式提出了一种解释。在BHJ和MoO之间插入一层薄的C层可抑制热降解机制,从而使器件在80°C下的寿命提高三个数量级。