Zhao Kexiang, Yao Ze-Fan, Wang Zi-Yuan, Zeng Jing-Cai, Ding Li, Xiong Miao, Wang Jie-Yu, Pei Jian
Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
J Am Chem Soc. 2022 Feb 23;144(7):3091-3098. doi: 10.1021/jacs.1c11782. Epub 2022 Feb 9.
BN-embedded polycyclic aromatic hydrocarbons (PAHs) with unique optoelectronic properties are underdeveloped relative to their carbonaceous counterparts due to the lack of suitable and facile synthetic methods. Moreover, the dearth of electron-deficient BN-embedded PAHs further hinders their application in organic electronics. Here we present the first facile synthesis of novel perylene diimide derivatives (BN-PDIs) featuring n-type B-N covalent bonds. The structures of these compounds are fully confirmed through the detailed characterizations with NMR, MS, and X-ray crystallography. Further investigation shows that the introduction of BN units significantly modifies the photophysical and electronic properties of these BN-PDIs and is further understood with the aid of theoretical calculations. Compared with the parent perylene diimides (PDIs), BN-PDIs exhibit deeper highest occupied molecular orbital energy levels, new absorption peaks in the high-energy region, hypsochromic shift of absorption and emission maxima, and decrement of photoluminescent quantum yields. Single-crystal field-effect transistors based on BN-PDIs showcase an electron mobility up to 0.35 cm V s, demonstrating their potential application in optoelectronic materials.
具有独特光电特性的硼氮嵌入多环芳烃(PAHs),由于缺乏合适且简便的合成方法,相对于其碳质同类物而言发展不足。此外,缺电子的硼氮嵌入多环芳烃的匮乏进一步阻碍了它们在有机电子学中的应用。在此,我们首次实现了具有n型B-N共价键的新型苝二酰亚胺衍生物(BN-PDIs)的简便合成。通过核磁共振(NMR)、质谱(MS)和X射线晶体学的详细表征,充分证实了这些化合物的结构。进一步研究表明,硼氮单元的引入显著改变了这些BN-PDIs的光物理和电子性质,并且借助理论计算能进一步理解这一现象。与母体苝二酰亚胺(PDIs)相比,BN-PDIs表现出更深的最高占据分子轨道能级、高能区域的新吸收峰、吸收和发射最大值的紫移以及光致发光量子产率的降低。基于BN-PDIs的单晶场效应晶体管展现出高达0.35 cm² V⁻¹ s⁻¹的电子迁移率,证明了它们在光电材料中的潜在应用。