Zhao Lixia, Liu Chang, Wang Kaiyou
School of Electrical Engineering, Tiangong University, 399 Binshuixi Road, Tianjin, 300387, P. R. China.
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China.
Small. 2022 Apr;18(14):e2106757. doi: 10.1002/smll.202106757. Epub 2022 Feb 26.
Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.
作为直接宽带隙半导体，III族氮化物（III-N）在光电子学中有许多应用，包括发光二极管、激光器、探测器、光催化等。将III-N半导体与包括表面等离子体激元、分布布拉格反射器和微腔在内的高效光学谐振相结合，已引起人们对提升其性能的极大兴趣，这不仅可以揭示光学谐振与准粒子之间的新耦合机制，还能揭示具有卓越性能的新型光电器件的屏蔽效应。在本综述中，内容涵盖了与等离子体激元学和/或微谐振器集成的基于GaN的光电器件的最新进展，包括发光二极管、光电探测器、太阳能电池和光催化。作者旨在提供对近期显著进展和突破的启发性见解，以及对未来高度集成、高速且高效的基于GaN的光电器件的前景展望。
