Zhou Ranran, Cheng Chi-An, Qiu Siying, Chen Jiayi, Nie Kun, Wu Mengyun, Lin Panlong, Wang Hua, Wang Luoxin, Mei Lefu
School of Materials Science and Engineering, Key Laboratory of Polyphenylene Sulfide Fiber and Application in Textile Industry, State Key Laboratory of New Textile Materials & Advanced Processing Technology and Key Laboratory of Textile Fiber and Products (Ministry of Education), Wuhan Textile University 430200 Wuhan P. R. China
Department of Bioengineering, University of California Los Angeles Los Angeles California USA.
RSC Adv. 2021 Aug 25;11(46):28716-28722. doi: 10.1039/d1ra04429j. eCollection 2021 Aug 23.
As promising low-dimensional semiconductor materials, cesium lead halide (CsPbX, X = Cl, Br, I) perovskite-like nanowires (NWs) can be widely applied to the field of semiconductor devices and integrated optoelectronics. Therefore, developing a facile and efficient synthesis method of cesium lead halide perovskite-like NWs can bring both fundamental and practical impacts to the field of optoelectronics. Here, we developed a synthesis strategy of all-inorganic cesium lead halide CsPbI perovskite-like NWs under catalyst-free, solution-phase, and low-temperature conditions. The synthesis strategy was designed such that no inert gas is required and thus enables the synthesis to be carried out in air, which significantly reduces temperature, steps, time, and cost required for the reaction. The as-synthesized NWs were 7 μm in length and 80-100 nm in diameter with ideal morphology. Most of the CsPbI NWs were crystallized in orthorhombic phases that were arranged orderly with a uniform growth direction. In addition, the CsPbI NWs showed a photoluminescence peak near 610 nm and the fluorescence lifetime was 7.34 ns. The photoluminescence mechanism of CsPbI NWs involves the self-trapping behaviour in the radiative recombination process. The composition of CsPbI NWs is highly related to the synthesis temperature. The facile synthesis strategy has opened up a novel path for the synthesis of perovskite-like NWs, laying the foundation for the application of nano-optoelectronic devices, fluorescent anti-counterfeiting, and fluorescent composite materials.
作为有前景的低维半导体材料,卤化铯铅(CsPbX,X = Cl、Br、I)类钙钛矿纳米线(NWs)可广泛应用于半导体器件和集成光电子领域。因此,开发一种简便高效的卤化铯铅类钙钛矿纳米线合成方法,可为光电子领域带来基础和实际影响。在此,我们开发了一种在无催化剂、溶液相和低温条件下合成全无机卤化铯铅CsPbI类钙钛矿纳米线的策略。该合成策略的设计使得无需惰性气体,从而能够在空气中进行合成,这显著降低了反应所需的温度、步骤、时间和成本。合成的纳米线长度为7μm,直径为80 - 100nm,形态理想。大多数CsPbI纳米线以正交相结晶,排列有序,生长方向均匀。此外,CsPbI纳米线在610nm附近呈现光致发光峰,荧光寿命为7.34ns。CsPbI纳米线的光致发光机制涉及辐射复合过程中的自陷行为。CsPbI纳米线的组成与合成温度高度相关。这种简便的合成策略为类钙钛矿纳米线的合成开辟了一条新途径,为纳米光电器件、荧光防伪和荧光复合材料的应用奠定了基础。