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pH值和温度对锌在碱性缓冲介质中的电化学和半导体性质的影响。

Impact of pH and temperature on the electrochemical and semiconducting properties of zinc in alkaline buffer media.

作者信息

El-Taib Heakal F, Abd-Ellatif W R, Tantawy N S, Taha A A

机构信息

Chemistry Department, Faculty of Science, Cairo University Giza 12613 Egypt

Faculty of Women for Arts, Science and Education, Ain Shams University Cairo 11566 Egypt.

出版信息

RSC Adv. 2018 Jan 19;8(7):3816-3827. doi: 10.1039/c7ra12723e. eCollection 2018 Jan 16.

Abstract

The electrochemical and semiconductive properties of spontaneously formed passive films on pure Zn were investigated in alkaline carbonate/bicarbonate buffer solutions as functions of pH and temperature. The study was performed in 0.1 M (CO + HCO ) mixtures over the pH range 9.2 to 9.8 using open circuit potential, electrochemical impedance spectroscopy (EIS), potentiodynamic polarization and Mott-Schottky analysis techniques. Generally, zinc passivation is enhanced with either increasing pH or decreasing the ambient temperature. The steady state potential ( ) value reveals that in pH 9.8 buffer the propensity of Zn for passivation is superior when compared with those in the other tested buffer solutions. The total surface film resistance ( ) derived from the impedance data proves this result, which is likely attributed to changes in composition and/or microstructure of the film. In pH 9.8 buffer solution the passivation tendency always decreases with temperature increase. However, in pH 9.2 the system behaves similarly up to 25 °C; afterwards zinc passivation trend was found to re-increase once more. The apparent activation energy for the corrosion process was evaluated and discussed. Analysis of Mott-Schottky plots was found to be suitable for characterizing the semiconductor properties of the naturally deposited barrier layers which are all consistent with the well-known n-type character of the oxide film on zinc. The absence of any evidences for the p-type semiconductive behavior indicates a preponderance of oxygen vacancies and zinc interstitials over metal vacancies. Moreover, Mott-Schottky results demonstrate that the donor concentration increases with either increasing pH or deceasing temperature commensurate with the increasing trends in the passive film thickness.

摘要

在碱性碳酸盐/碳酸氢盐缓冲溶液中,研究了纯锌表面自发形成的钝化膜的电化学和半导体性质与pH值和温度的关系。该研究在0.1 M(CO₃²⁻ + HCO₃⁻)混合溶液中,pH范围为9.2至9.8,采用开路电位、电化学阻抗谱(EIS)、动电位极化和莫特-肖特基分析技术进行。一般来说,随着pH值的增加或环境温度的降低,锌的钝化作用增强。稳态电位(Eoc)值表明,在pH 9.8的缓冲溶液中,锌的钝化倾向比其他测试缓冲溶液中的更强。由阻抗数据得出的总表面膜电阻(Rt)证明了这一结果,这可能归因于膜的组成和/或微观结构的变化。在pH 9.8的缓冲溶液中,钝化倾向总是随着温度的升高而降低。然而,在pH 9.2时,该体系在25℃以下表现相似;之后发现锌的钝化趋势再次增加。评估并讨论了腐蚀过程的表观活化能。发现对莫特-肖特基图的分析适用于表征自然沉积阻挡层的半导体性质,这与锌上氧化膜众所周知的n型特性一致。没有任何p型半导体行为的证据表明氧空位和锌间隙原子比金属空位占优势。此外,莫特-肖特基结果表明,施主浓度随着pH值的增加或温度的降低而增加,这与钝化膜厚度的增加趋势一致。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf96/9077711/cd83b473d0fb/c7ra12723e-f1.jpg

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