Bai Zongqi, Zhang Sen, Xiao Yang, Li Miaomiao, Luo Fang, Li Jie, Qin Shiqiao, Peng Gang
College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China.
College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China.
Nanomaterials (Basel). 2022 Apr 21;12(9):1419. doi: 10.3390/nano12091419.
Van der Waals heterojunctions, formed by stacking two-dimensional materials with various structural and electronic properties, opens a new way to design new functional devices for future applications and provides an ideal research platform for exploring novel physical phenomena. In this work, bilayer graphene/WS/metal heterojunctions (GWMHs) with vertical architecture were designed and fabricated. The tunneling current-bias voltage ( - ) properties of GWMHs can be tuned by 5 × 10 times in magnitude for current increasing from 0.2 nA to 1 mA with applied bias voltage increasing from 10 mV to 2 V. Moreover, the transfer properties of GWMHs exhibit n-type conduction at = 0.1 V and bipolar conduction at = 2 V; these findings are explained well by direct tunneling () and Fowler-Nordheim tunneling (), respectively. The results show the great potential of GWMHs for high-power field-effect transistors (FETs) and next-generation logic electronic devices.
通过堆叠具有各种结构和电子特性的二维材料形成的范德华异质结，为设计未来应用的新型功能器件开辟了一条新途径，并为探索新型物理现象提供了理想的研究平台。在这项工作中，设计并制备了具有垂直结构的双层石墨烯/WS/金属异质结（GWMHs）。随着施加偏置电压从10 mV增加到2 V，电流从0.2 nA增加到1 mA，GWMHs的隧穿电流-偏置电压（I-V）特性在幅度上可调节5×10倍。此外，GWMHs的传输特性在V = 0.1 V时表现出n型传导，在V = 2 V时表现出双极传导；这些发现分别通过直接隧穿（DT）和福勒-诺德海姆隧穿（FNT）得到了很好的解释。结果表明GWMHs在高功率场效应晶体管（FET）和下一代逻辑电子器件方面具有巨大潜力。
