Baumgarten Robert, Ingale Piyush, Knemeyer Kristian, Naumann d'Alnoncourt Raoul, Driess Matthias, Rosowski Frank
BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenberstraße 36, 10623 Berlin, Germany.
Institut für Chemie: Metallorganik und Anorganische Materialien, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany.
Nanomaterials (Basel). 2022 Apr 25;12(9):1458. doi: 10.3390/nano12091458.
The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaO, InO) was deposited using sequential dosing of trimethylgallium or trimethylindium and water at 150 °C. In-situ thermogravimetry provided direct insight into the growth rates and deposition behavior. The highly amorphous and well-dispersed nature of the oxides was shown by XRD and STEM EDX-mappings. N sorption analysis revealed that both ALD processes resulted in high specific surface areas while maintaining the pore structure. The stoichiometry of GaO and InO was suggested by thermogravimetry and confirmed by XPS. FTIR and solid-state NMR were conducted to investigate the ligand deposition behavior and thermogravimetric data helped estimate the layer thicknesses. Finally, this study provides a deeper understanding of ALD on powder substrates and enables the precise synthesis of high surface area metal oxides for catalytic applications.
研究了在介孔二氧化硅粉末上镓和铟氧化物的原子层沉积，并与相关的氧化铝工艺进行了比较。使用三甲基镓或三甲基铟与水在150°C下顺序给药沉积各自的氧化物（GaO、InO）。原位热重分析直接洞察了生长速率和沉积行为。XRD和STEM EDX映射显示了氧化物的高度非晶态和良好分散性。N吸附分析表明，两种原子层沉积工艺在保持孔结构的同时都产生了高比表面积。热重分析表明了GaO和InO的化学计量，并通过XPS得到了证实。进行了FTIR和固态NMR以研究配体沉积行为，热重数据有助于估计层厚度。最后，本研究对粉末基材上的原子层沉积有了更深入的理解，并能够精确合成用于催化应用的高比表面积金属氧化物。
