使用超临界水一步法制备各向异性蚀刻石墨烯。
One-Step Production of Anisotropically Etched Graphene Using Supercritical Water.
作者信息
Tomai Takaaki, Tamura Naoki, Honma Itaru
机构信息
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan.
出版信息
ACS Macro Lett. 2013 Sep 17;2(9):794-798. doi: 10.1021/mz400186t. Epub 2013 Aug 21.
We developed a one-step method for production of anisotropically etched graphene using supercritical fluid (SCF). Anisotropic etching of a graphite substrate and dispersed graphite powder with Ag nanoparticles was conducted in supercritical water (SCW). Because of the exfoliation effect of SCF, graphene was isolated from the graphite simultaneously with the anisotropic etching. High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy revealed the production of multilayer graphene exfoliated from the anisotropically etched graphite surface.
我们开发了一种使用超临界流体（SCF）制备各向异性蚀刻石墨烯的一步法。在超临界水（SCW）中对石墨基板和分散有银纳米颗粒的石墨粉末进行各向异性蚀刻。由于超临界流体的剥离作用，石墨烯在各向异性蚀刻的同时从石墨中分离出来。高分辨率透射电子显微镜（HRTEM）和拉曼光谱显示从各向异性蚀刻的石墨表面剥离出了多层石墨烯。
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