在SiO/Si介电基体中离子束合成氧化镓纳米晶体

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO/Si Dielectric Matrix.

作者信息

Korolev Dmitry S, Matyunina Kristina S, Nikolskaya Alena A, Kriukov Ruslan N, Nezhdanov Alexey V, Belov Alexey I, Mikhaylov Alexey N, Sushkov Artem A, Pavlov Dmitry A, Yunin Pavel A, Drozdov Mikhail N, Tetelbaum David I

机构信息

Research Institute of Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.

Department of Physics, Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.

出版信息

Nanomaterials (Basel). 2022 May 27;12(11):1840. doi: 10.3390/nano12111840.

DOI:10.3390/nano12111840

PMID:35683695

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9182438/

Abstract

A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor-acceptor pairs (DAP) in GaO nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of β-GaO nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.

摘要

提出了一种基于氧化镓通过在SiO/Si介电基质中离子束合成该化合物纳米晶体来制备纳米材料的新方法。报道了成相元素（镓和氧）离子辐照顺序对注入层化学成分的影响。即使在没有进行注入后退火的情况下，也显示出了元素态和氧化态镓分布的分离。退火后，光谱中出现了与GaO纳米晶体中施主-受主对（DAP）复合相关的蓝光光致发光。通过透射电子显微镜进行的结构表征证实了β-GaO纳米晶体的形成。所得结果为在传统CMOS技术中使用纳米晶氧化镓夹杂物开辟了可能性。