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有机半导体中的顺磁探针:Alq和8-羟基喹啉的Mu加合物的μSR和DFT计算

Paramagnetic probes in an organic semiconductor: μSR and DFT calculations of the Mu adducts of Alq and 8-hydroxyquinoline.

作者信息

McKenzie Iain, Cannon Joseph, Cordoni-Jordan Danaan, Mulley Brian P, Scheuermann Robert

机构信息

Centre for Molecular and Materials Science, TRIUMF, Vancouver, British Columbia V6T 2A3, Canada.

School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom.

出版信息

J Chem Phys. 2022 Aug 14;157(6):064702. doi: 10.1063/5.0105200.

Abstract

It has been claimed that longitudinal field muon spin relaxation (LF-μSR) experiments on the organic semiconductor (OSC) tris-(8-hydroxyquinoline)aluminum(III) (Alq) have measured electron hopping rates of ∼10s, while density functional theory (DFT) calculations suggest that electron hopping between a muoniated radical and a neighboring molecule is energetically unfavorable and that the LF-μSR experiments were probing muoniated radicals with localized spin density. We have performed avoided level crossing muon spin resonance (ALC-μSR) and transverse field muon spin rotation (TF-μSR) measurements on Alq and 8-hydroxyquinoline (8hq), which is meant to model the muoniated radicals present in Alq when they are not in an OSC. These are supplemented by benchmarked DFT calculations. The ALC-μSR and TF-μSR spectra of 8hq and Alq are best explained by Mu adding to all six secondary carbons of the quinolate rings with roughly equal yields and localized spin density. There is no evidence in the TF-μSR spectrum of Alq for the formation of radicals with muon hyperfine coupling constants of 23 or 91 MHz as reported earlier by others. Our measurements support the view that there is localized spin density on the molecule to which Mu is covalently bound and the muon is not a passive probe in organic systems as it can be incorporated into radicals that have different electronic structures to the parent compounds. The muoniated radicals in Alq are more short-lived than in 8hq, which could be due to interactions with mobile electrons in the OSC, but with electron spin flip rates on the order of ∼10s.

摘要

有人声称,对有机半导体(OSC)三(8-羟基喹啉)铝(III)(Alq)进行的纵向场μ子自旋弛豫(LF-μSR)实验测量出电子跳跃速率约为10次/秒,而密度泛函理论(DFT)计算表明,μ子化自由基与相邻分子之间的电子跳跃在能量上是不利的,并且LF-μSR实验探测的是具有局域自旋密度的μ子化自由基。我们对Alq和8-羟基喹啉(8hq)进行了避免能级交叉μ子自旋共振(ALC-μSR)和横向场μ子自旋旋转(TF-μSR)测量,8hq旨在模拟Alq中不存在于OSC时的μ子化自由基。这些测量辅以经过基准测试的DFT计算。8hq和Alq的ALC-μSR和TF-μSR光谱最好的解释是,Mu以大致相等的产率加成到喹啉酸环的所有六个仲碳上,并具有局域自旋密度。在Alq的TF-μSR光谱中,没有证据表明如其他人之前报道的那样形成了具有23或91MHzμ子超精细耦合常数的自由基。我们的测量结果支持这样一种观点,即与Mu共价结合的分子上存在局域自旋密度,并且μ子在有机系统中不是一个被动探针,因为它可以掺入到具有与母体化合物不同电子结构的自由基中。Alq中的μ子化自由基比8hq中的更短寿,这可能是由于与OSC中移动电子的相互作用,但电子自旋翻转速率约为10次/秒。

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