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通过注入乙酸苯乙铵的准二维钙钛矿晶体实现发光二极管的超高外量子效率

Superior External Quantum Efficiency of LEDs via Quasi-2D Perovskite Crystals Implanted with Phenethylammonium Acetate.

作者信息

Xiao Meiqin, Xiang Ting, Kim Dohyung, Wang Miaosheng, Zhang Wei, Ahmadi Mahshid, Li Ting, Wu Xiaoyan, Xu Long, Chen Ping

机构信息

Chongqing key Laboratory of Micro&Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing400715, People's Republic of China.

Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee37996, United States.

出版信息

ACS Appl Mater Interfaces. 2022 Oct 12;14(40):45352-45363. doi: 10.1021/acsami.2c12048. Epub 2022 Sep 30.

Abstract

The multiple quantum well structure of a quasi-two-dimensional (quasi-2D) perovskite leads to nonradiative Auger recombination (AR). This is due to high local carrier density in recombination centers, although the radiative recombination is improved by efficient energy transfer. In this study, we suppress the AR by introducing phenethylammonium acetate (PEAAc) into the quasi-2D PEACsPbBr perovskite. The recombination centers of ≥ 4 phases can be promoted because the COO preferentially coordinates with Pb inhibiting the fast formation of = 1, 2, 3 phases with phenethylammonium anion (PEA). Thus, the AR is suppressed due to the lower density of local charge carriers. To balance the AR suppression and decreasing binding energy in promoting the ≥ 4 phases, the PEAAc:PEABr molar ratios are adjusted. At the optimal molar ratio, perovskite light-emitting diodes (PeLEDs) with a maximum luminescence of ∼29942 cd m and a maximum external quantum efficiency of ∼20.2% are achieved. These results confirm the most efficient PeLEDs based on PEACsPbBr without passivation. Moreover, the efficiency roll off is significantly mitigated with a high threshold of over 3.51 mA/cm. This study develops high-efficiency PeLEDs with a low efficiency rolloff.

摘要

准二维(准2D)钙钛矿的多量子阱结构会导致非辐射俄歇复合(AR)。这是由于复合中心处的局部载流子密度较高,尽管通过有效的能量转移提高了辐射复合效率。在本研究中,我们通过将乙酸苯乙铵(PEAAc)引入准2D PEACsPbBr钙钛矿中来抑制AR。≥4相的复合中心可以得到促进,因为COO优先与Pb配位,抑制了与苯乙铵阴离子(PEA)形成 = 1、2、3相的快速过程。因此,由于局部电荷载流子密度较低,AR得到抑制。为了在促进≥4相时平衡AR抑制和降低结合能,调整了PEAAc:PEABr的摩尔比。在最佳摩尔比下,实现了最大发光强度约为29942 cd/m²、最大外量子效率约为20.2%的钙钛矿发光二极管(PeLED)。这些结果证实了基于PEACsPbBr且无需钝化的最有效的PeLED。此外,在超过3.51 mA/cm²的高阈值下,效率滚降得到显著缓解。本研究开发了具有低效率滚降的高效PeLED。

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