Zhou Huanyu, Mallia Giuseppe, Harrison Nicholas M
Department of Chemistry and Institute for Molecular Science and Engineering, Imperial College London, White City Campus, 80 Wood Lane, LondonW12 0BZ, U.K.
J Phys Chem C Nanomater Interfaces. 2022 Nov 17;126(45):19435-19445. doi: 10.1021/acs.jpcc.2c05494. Epub 2022 Nov 9.
The electronic and spintronic properties of the monovacancies in freestanding and isotopically compressed graphene are investigated using hybrid exchange density functional perturbation theory. When the effects of electronic self-interaction are taken into account, an integer magnetic moment of 2 μ is identified for a Jahn-Teller reconstructed V(5-9) monovacancy in freestanding graphene. For graphene with stable ripples induced by a compressive strain of 5%, a bond reconstruction produces a V(55-66) structure for the monovacancy, which is localized at the saddle points of the ripple. The sizeable local distortion induced by reconstruction modifies both the geometric and electronic properties of rippled graphene and quenches the magnetic moment of the vacancy due to the sp hybridization of the central atom. The nonmagnetic V(55-66) structure is found to be stable on rippled structures, with the formation energy ∼2.3 eV lower than that of the metastable distorted V(5-9) structures localized at sites other than the saddle points. The electronic ground state of distorted V(5-9) corresponds to a wide range of fractional magnetic moments (0.50-1.25 μ). The computed relative stabilities and the electronic and magnetic properties of the V(5-9) structures are found to be closely related to their local distortions. This analysis of the fundamental properties of defective graphene under compression suggests a number of strategies for generating regular defect patterns with tuneable magnetic and electronic properties and may, therefore, be used as a novel technique to achieve more precise control of graphene electronic structure for various application scenarios such as transistors, strain sensors, and directed chemisorption.
利用杂化交换密度泛函微扰理论研究了独立的和同位素压缩的石墨烯中单空位的电子和自旋电子性质。当考虑电子自相互作用的影响时,对于独立石墨烯中 Jahn-Teller 重构的 V(5-9) 单空位,确定其整数磁矩为 2μ。对于由 5% 的压缩应变诱导产生稳定波纹的石墨烯,键重构产生了单空位的 V(55-66) 结构,该结构位于波纹的鞍点处。重构引起的相当大的局部畸变改变了波纹状石墨烯的几何和电子性质,并由于中心原子的 sp 杂化而淬灭了空位的磁矩。发现非磁性的 V(55-66) 结构在波纹结构上是稳定的,其形成能比位于鞍点以外位置的亚稳畸变 V(5-9) 结构低约 2.3 eV。畸变的 V(5-9) 的电子基态对应于广泛的分数磁矩(0.50-1.25 μ)。发现 V(5-9) 结构的计算相对稳定性以及电子和磁性性质与其局部畸变密切相关。对压缩下缺陷石墨烯基本性质的这种分析提出了一些生成具有可调磁和电子性质的规则缺陷图案的策略,因此可以用作一种新技术,以在各种应用场景(如晶体管、应变传感器和定向化学吸附)中实现对石墨烯电子结构更精确的控制。