Zhang Xinyu, Li Ziqing, Yan Tingting, Su Li, Fang Xiaosheng
Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China.
Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, P. R. China.
Small. 2023 Mar;19(9):e2206310. doi: 10.1002/smll.202206310. Epub 2023 Jan 1.
2D Ruddlesden-Popper perovskites (PVKs) have recently shown overwhelming potential in various optoelectronic devices on account of enhanced stability to their 3D counterparts. So far, regulating the phase distribution and orientation of 2D perovskite thin films remains challenging to achieve efficient charge transport. This work elucidates the balance struck between sufficient gradient sedimentation of perovskite colloids and less formation of small-n phases, which results in the layered alignment of phase compositions and thus in enhanced photoresponse. The solvent engineering strategy, together with the introduction of poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS) and PC BM layer jointly contribute to outstanding self-powered performance of indium tin oxide/PEDOT:PSS/PVK/PC BM/Ag device, with a photocurrent of 18.4 µA and an on/off ratio up to 2800. The as-fabricated photodetector exhibits high sensitivity characteristics with the peak responsivity of 0.22 A W and the detectivity up to 1.3 × 10 Jones detected at UV-A region, outperforming most reported perovskite-based UV photodetectors and maintaining high stability over a wide spectrum ranging from UV to visible region. This discovery supplies deep insights into the control of ordered phases and crystallinity in quasi-2D perovskite films for high-performance optoelectronic devices.
二维Ruddlesden-Popper钙钛矿(PVK)由于其相对于三维钙钛矿具有更高的稳定性,最近在各种光电器件中显示出巨大的潜力。到目前为止,调节二维钙钛矿薄膜的相分布和取向对于实现有效的电荷传输仍然具有挑战性。这项工作阐明了在钙钛矿胶体充分的梯度沉降和较少的小n相形成之间取得的平衡,这导致了相组成的层状排列,从而增强了光响应。溶剂工程策略,以及聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)和PC BM层的引入,共同促成了氧化铟锡/PEDOT:PSS/PVK/PC BM/Ag器件出色的自供电性能,光电流为18.4 μA,开/关比高达2800。所制备的光电探测器具有高灵敏度特性,在紫外-A区域检测到的峰值响应率为0.22 A W,探测率高达1.3×10琼斯,优于大多数报道的基于钙钛矿的紫外光电探测器,并且在从紫外到可见光区域的宽光谱范围内保持高稳定性。这一发现为高性能光电器件中准二维钙钛矿薄膜的有序相和结晶度控制提供了深刻的见解。