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由锗(110)上的五边形引起的电荷局域化

Charge Localization Induced by Pentagons on Ge(110).

作者信息

Klaassen Dennis J, Castenmiller Carolien, Zandvliet Harold J W, Bampoulis Pantelis

机构信息

Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, P.O. Box 217, 7500AE Enschede, Overijssel, The Netherlands.

出版信息

J Phys Chem C Nanomater Interfaces. 2022 Dec 28;127(1):599-605. doi: 10.1021/acs.jpcc.2c06399. eCollection 2023 Jan 12.

Abstract

The Ge(110) surface reconstructs into ordered and disordered phases, in which the basic unit is a five-membered ring of Ge atoms (pentagon). The variety of surface reconstructions leads to a rich electronic density of states with several surface states. Using scanning tunneling microscopy and spectroscopy, we have identified the exact origins of these surface states and linked them to either the Ge pentagons or the underlying Ge-Ge bonds. We show that even moderate fluctuations in the positions of the Ge pentagonal units induce large variations in the local density of states. The local density of states modulates in a precise manner, following the geometrical constraints on tiling Ge pentagons. These geometry-correlated electronic states offer a vast configurational landscape that could provide new opportunities in data storage and computing applications.

摘要

Ge(110)表面重构为有序相和无序相,其中基本单元是由锗原子组成的五元环(五边形)。表面重构的多样性导致了具有多个表面态的丰富电子态密度。利用扫描隧道显微镜和光谱学,我们确定了这些表面态的确切起源,并将它们与锗五边形或底层的锗-锗键联系起来。我们表明,即使锗五边形单元位置的适度波动也会导致局部态密度的大幅变化。局部态密度按照平铺锗五边形的几何约束精确调制。这些与几何相关的电子态提供了广阔的构型景观,可为数据存储和计算应用提供新的机会。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/96cb/9841572/9e11e5525da1/jp2c06399_0002.jpg

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