Mun Junsik, Ko Eun Kyo, Kang Baekjune, Gil Byeongjun, Kim Choong H, Hahn Sungsoo, Song Jeongkeun, Zhu Yimei, Sohn Changhee, Noh Tae Won, Kim Miyoung
Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul08826, Republic of Korea.
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul08826, Republic of Korea.
Nano Lett. 2023 Feb 8;23(3):1036-1043. doi: 10.1021/acs.nanolett.2c04633. Epub 2023 Jan 30.
The oxide interfaces between materials with different structural symmetries have been actively studied due to their novel physical properties. However, the investigation of intriguing interfacial phenomena caused by the oxygen octahedral tilt (OOT) proximity effect has not been fully exploited, as there is still no clear understanding of what determines the proximity length and what the underlying control mechanism is. Here, we achieved scalability of the OOT proximity effect in SrRuO (SRO) by epitaxial strain near the SRO/SrTiO heterointerface. We demonstrated that the OOT proximity length scale of SRO is extended from 4 unit cells to 14 unit cells by employing advanced scanning transmission electron microscopy. We also suggest that this variation may originate from changes in phonon dispersions due to electron-phonon coupling in SRO. This study will provide in-depth insights into the structural gradients of correlated systems and facilitate potential device applications.
具有不同结构对称性的材料之间的氧化物界面因其新颖的物理性质而受到广泛研究。然而,由于对决定邻近长度的因素以及潜在的控制机制仍缺乏清晰的认识,由氧八面体倾斜(OOT)邻近效应引起的有趣界面现象的研究尚未得到充分利用。在此,我们通过在SRO/SrTiO异质界面附近施加外延应变,实现了SRO中OOT邻近效应的可扩展性。我们利用先进的扫描透射电子显微镜证明,SRO的OOT邻近长度尺度从4个晶胞扩展到了14个晶胞。我们还认为,这种变化可能源于SRO中电子-声子耦合导致的声子色散变化。这项研究将为相关系统的结构梯度提供深入见解,并促进潜在的器件应用。