School of Physics and Materials Science and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, China.
Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu 215500, China.
Phys Chem Chem Phys. 2023 Feb 15;25(7):5785-5794. doi: 10.1039/d2cp05442f.
High-quality MnCrSb ( = 0.01, 0.04, and 0.1) epitaxial thin films were grown on SrTiO (STO) (001) single-crystal substrates using molecular beam epitaxy. Magnetotransport and magnetic measurements reveal that the = 0.01 sample undergoes a quasi-ferrimagnetic (I) [Q-FIM(I)]-to-ferrimagnetic (II) [FIM(II)] spin reorientation (SR) transition and a giant magnetoresistance (MR) associated first-order ferrimagnetic(II)-to-antiferromagnetic (AFM) phase transition upon cooling, resulting in the AFM ground state with a weak in-plane net moment. Upon increasing the doping level from = 0.01 to 0.1, both the SR transition and the first-order magnetic transition are suppressed. For = 0.1, the former transition is suppressed, leaving only the Q-FIM(I)-to-AFM transition within the whole temperature region. shows almost similar changes upon the application of either in-plane or out-of-plane magnetic fields. values of the = 0.01 and 0.04 samples are much higher than those of the MnCrSb bulk with similar doping levels, which can be understood by the clamping effect from STO substrates. For each thin-film sample, the MR effect is observed near and disappears in the high temperature Q-FIM(I) phase and low temperature AFM phase, indicating that MR is related to the spin-dependent electron scattering during the first-order magnetic phase transition. Based on the magnetotransport and magnetic data, a magnetic phase diagram is established for the MnCrSb films in the low doping level region.
高质量的 MnCrSb(=0.01、0.04 和 0.1)外延薄膜采用分子束外延技术在 SrTiO(STO)(001)单晶衬底上生长。磁输运和磁测量表明，=0.01 样品经历了准铁磁（I）[Q-FIM（I）]-铁磁（II）[FIM（II）]自旋重定向（SR）转变和与巨磁电阻（MR）相关的铁磁（II）-反铁磁（AFM）相转变，冷却后导致 AFM 基态具有较弱的面内净磁矩。随着掺杂水平从=0.01 增加到 0.1，SR 转变和一级磁转变都被抑制。对于=0.1，前者的转变被抑制，在整个温度区域内只留下 Q-FIM（I）-到 AFM 的转变。在施加面内或面外磁场时，的变化几乎相似。=0.01 和 0.04 样品的 值远高于具有类似掺杂水平的 MnCrSb 体的 值，这可以通过 STO 衬底的夹锁效应来理解。对于每个薄膜样品，MR 效应在附近观察到，并在高温 Q-FIM（I）相和低温 AFM 相中消失，表明 MR 与一级磁相变期间的自旋相关电子散射有关。基于磁输运和磁数据，在低掺杂水平区域为 MnCrSb 薄膜建立了磁相图。
