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耗散表明驱动无序系统中的记忆形成。

Dissipation Indicates Memory Formation in Driven Disordered Systems.

机构信息

Department of Condensed Matter, School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, Israel and Center for Physics and Chemistry of Living Systems, Tel Aviv University, Tel Aviv 69978, Israel.

出版信息

Phys Rev Lett. 2023 Jan 27;130(4):048202. doi: 10.1103/PhysRevLett.130.048202.

DOI:10.1103/PhysRevLett.130.048202
PMID:36763418
Abstract

Disordered and amorphous materials often retain memories of perturbations they have experienced since preparation. Studying such memories is a gateway to understanding this challenging class of systems. However, it often requires the ability to measure local structural changes in response to external drives. Here, we show that dissipation is a generic macroscopic indicator of the memory of the largest perturbation. Through experiments in crumpled sheets under cyclic drive, we show that dissipation transiently increases when first surpassing the largest perturbation due to irreversible structural changes with unique statistics. This finding is used to devise novel memory readout protocols based on global observables only. The general applicability of this approach is demonstrated by revealing a similar memory effect in a three-dimensional amorphous solid.

摘要

无序和非晶态材料通常保留着自制备以来经历的扰动的记忆。研究这种记忆是理解这一具有挑战性的系统类别的途径。然而,它通常需要能够测量对外部驱动的局部结构变化。在这里,我们表明耗散是最大扰动记忆的通用宏观指标。通过在循环驱动下褶皱片的实验,我们表明当首次超过由于不可逆结构变化而具有独特统计特性的最大扰动时,耗散会暂时增加。这一发现被用于设计仅基于全局可观测量的新型记忆读出协议。通过在三维非晶固体中揭示类似的记忆效应,证明了这种方法的普遍适用性。

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