Luo Liang, Zhou Bao, Liu Zhenzhen, Zhao Qirong, Wang Chao, Duan Zhuoqi, Xie Zaixin, Yang Xiaobo, Hu Yongmao
College of Engineering, Dali University Dali Yunnan 671003 China
Faculty of Materials Science and Engineering, Kunming University of Science and Technology Kunming 650093 China.
RSC Adv. 2023 Mar 14;13(13):8476-8486. doi: 10.1039/d2ra04659h.
Theoretically, cuprous oxide (CuO) is a particularly excellent potential material, for the hole transport layer (HTL) of perovskite solar cells (PSCs). However, the photoelectric conversion efficiency (PCE) of its experimental samples is still not ideal. The main reasons for this include the material, and inherent and interface defects of CuO, but this can be improved by doping. In this research, Te- and Se/Te-doped CuO were experimentally and numerically studied to check the improvement of the material and interface properties. It was found that, for both the electrical and optical properties, the Se/Te-doped CuO performed considerably better than that which had been Te-doped and the pure CuO. Compared with the pure CuO thin film, the carrier mobility of the Se/Te-doped CuO thin film is improved from 60 cm V s to 1297 cm V s, and the bandgap changed from 2.05 eV to 1.88 eV. According to the results calculated using solar cell simulation software SCAPS, the cell efficiency of the Se/Te-doped CuO is improved by 22% when compared to that of pure CuO. This efficiency can be further improved to 34% by optimizing the thickness of the Se/Te-doped CuO thin film and the defect density of states between the material interfaces.
从理论上讲，氧化亚铜（CuO）对于钙钛矿太阳能电池（PSC）的空穴传输层（HTL）而言是一种极具潜力的优异材料。然而，其实验样品的光电转换效率（PCE）仍不尽如人意。造成这种情况的主要原因包括CuO的材料、固有缺陷和界面缺陷，但可以通过掺杂来改善。在本研究中，对Te掺杂和Se/Te共掺杂的CuO进行了实验和数值研究，以检验材料和界面性能的改善情况。结果发现，在电学和光学性能方面，Se/Te共掺杂的CuO均比Te掺杂的CuO以及纯CuO表现得更好。与纯CuO薄膜相比，Se/Te共掺杂的CuO薄膜的载流子迁移率从60 cm² V⁻¹ s⁻¹提高到了1297 cm² V⁻¹ s⁻¹，带隙从2.05 eV变为1.88 eV。根据使用太阳能电池模拟软件SCAPS计算的结果，Se/Te共掺杂的CuO的电池效率相较于纯CuO提高了22%。通过优化Se/Te共掺杂的CuO薄膜的厚度以及材料界面之间的缺陷态密度，该效率可进一步提高至34%。
