In-situ mechanochemically tailorable 2D gallium oxyselenide for enhanced optoelectronic NO gas sensing at room temperature.

The adverse effects of NO on the environment and human health promote the development of high-performance gas sensors to address the need for monitoring. Two-dimensional (2D) metal chalcogenides have been considered an emerging group of NO-sensitive materials, while incomplete recovery and low long-term stability are the two major hurdles for their practical implementation. The transformation into oxychalcogenides is an effective strategy to alleviate these drawbacks, but usually requires multiple-step synthesis and lacks controllability. Here, we prepare tailorable 2D p-type gallium oxyselenide with the thicknesses of 3-4 nm, through a single-step mechanochemical synthesis that combines the in-situ exfoliation and oxidation of bulk crystals. The optoelectronic NO sensing performances of such 2D gallium oxyselenide with different oxygen contents are investigated at room temperature, in which 2D GaSeO exhibits the largest response magnitude of 82.2% towards 10 ppm NO at the irradiation of UV, with full reversibility, excellent selectivity, and long term stability for at least one month. Such overall performances are significantly improved over those of reported oxygen-incorporated metal chalcogenide-based NO sensors. This work provides a feasible approach to prepare 2D metal oxychalcogenides in a single-step manner and demonstrates their great potential for room-temperature fully reversible gas sensing.