Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea.
Center for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Korea.
ACS Appl Mater Interfaces. 2023 Jul 5;15(26):31608-31616. doi: 10.1021/acsami.3c03213. Epub 2023 Jun 20.
Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO) to achieve a high peak-to-valley current ratio (PVCR) and peak current density () as well as controllable peak and valley voltages (). When a phase transition is induced in VO, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO threshold voltage tunability characteristics. Moreover, is easily modulated by controlling the length of VO. In addition, a maximum of 1.6 × 10 A/m is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.
基于带间隧穿（BTBT）机制的负微分电阻（NDR）最近在提高各种电子设备的性能方面显示出巨大的潜力。然而，由于 NDR 机制的限制，传统的基于 BTBT 的 NDR 器件的适用性受到其性能不足的限制。在本研究中，我们开发了一种基于绝缘-金属相变（IMT）的 NDR 器件，利用二氧化钒（VO）的急剧电阻开关来实现高的峰谷电流比（PVCR）和峰值电流密度（）以及可控制的峰和谷电压（）。当在 VO 中诱导相变时，通过降低 VO 电阻，二维通道上的有效电压偏置减小。因此，IMT 引起的有效电压调节导致急剧的 NDR。这种基于急剧 IMT 的 NDR 机制通过其栅极电压和 VO 阈值电压可调谐特性实现了最大的 PVCR 为 71.1。此外，通过控制 VO 的长度很容易调节。此外，通过光可调谐特性实现了 1.6×10 A/m 的最大值。所提出的基于 IMT 的 NDR 器件有望为下一代电子设备的各种 NDR 器件的发展做出贡献。
