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GaGeTe单层的电子和光学性质的理论研究。

Theoretical investigations of the electronic and optical properties of a GaGeTe monolayer.

作者信息

Han Nguyen Thi, Dien Vo Khuong, Chang Tay-Rong, Lin Ming-Fa

机构信息

Department of Physics, National Cheng Kung University 1 University Road Tainan 70101 Taiwan

Center for Quantum Frontiers of Research and Technology (QFort) Tainan 70101 Taiwan.

出版信息

RSC Adv. 2023 Jun 27;13(28):19464-19476. doi: 10.1039/d3ra03160h. eCollection 2023 Jun 22.

Abstract

Our study focused on exploring the electronic and optical characteristics of the GaGeTe monolayer using first-principles calculations. Our findings showed that this material has remarkable physical and chemical properties attributed to its unique band structure, van Hove singularities in the density of states (DOS), charge density distributions, and charge density differences. We also observed excitonic effects, multiple optical excitation peaks, and strong plasmon modes in the energy loss functions, absorption coefficients, and reflectance spectra, which contribute to its enriched optical response. Moreover, we were able to establish a close relationship between the orbital hybridizations of the initial and final states with each optical excitation peak. Our results suggest that GaGeTe monolayers hold great potential for various semiconductor applications, especially those involving optics. Furthermore, the theoretical framework we used can be applied to study the electronic and optical properties of other graphene-like semiconductor materials.

摘要

我们的研究聚焦于运用第一性原理计算来探索GaGeTe单层的电子和光学特性。我们的研究结果表明,这种材料因其独特的能带结构、态密度(DOS)中的范霍夫奇点、电荷密度分布以及电荷密度差而具有显著的物理和化学性质。我们还在能量损失函数、吸收系数和反射光谱中观察到了激子效应、多个光学激发峰以及强等离子体激元模式,这些都有助于其丰富的光学响应。此外,我们能够在每个光学激发峰的初态和末态的轨道杂化之间建立紧密的关系。我们的结果表明,GaGeTe单层在各种半导体应用中,特别是涉及光学的应用中具有巨大潜力。此外,我们使用的理论框架可用于研究其他类石墨烯半导体材料的电子和光学性质。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5d01/10294289/d90c45b465b1/d3ra03160h-f1.jpg

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