Wang Xin, Zhang Xiaoyue, Liu Liwei, Song Tielei, Liu Zhifeng, Cui Xin
School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
Nanomaterials (Basel). 2023 Jun 24;13(13):1927. doi: 10.3390/nano13131927.
Owing to the similar valence electron structures between the B-N bond and the C-C bond, boron nitride, similar to carbon, can form abundant polymorphs with different frameworks, which possess rich mechanical and electronic properties. Using the hollow, cage-like BN cluster as building blocks, here, we established three new BN polymorphs with low-density porous structures, termed Cub-BN, Tet-BN, and Ort-BN, which have cubic (P4¯3m), tetragonal (4/), and orthomorphic () symmetries, respectively. Our density functional theory (DFT) calculations indicated that the existence of porous structure Cub-BN, Tet-BN, and Ort-BN were not only energetically, dynamically, thermally and mechanically stable, they were even more stable than some known phases, such as sc-BN and Hp-BN. The obtained Pugh's ratio showed that the Cub-BN and Tet-BN structures were brittle materials, but Ort-BN was ductile. The analysis of ideal strength, Young's moduli, and shear moduli revealed that the proposed new phases all exhibited sizable mechanical anisotropy. Additionally, the calculation of electronic band structures and density of states showed that they were all semiconducting with a wide, indirect band gap (~3 eV). The results obtained in this work not only identified three stable BN polymorphs, they also highlighted a bottom-up way to obtain the desired materials with the clusters serving as building blocks.
由于硼氮(B-N)键和碳碳(C-C)键之间具有相似的价电子结构,氮化硼与碳类似,可以形成具有不同结构框架的多种多晶型物,这些多晶型物具有丰富的机械和电子性能。在此,我们以空心笼状的硼氮簇为构建单元,建立了三种具有低密度多孔结构的新型氮化硼多晶型物,分别称为立方氮化硼(Cub-BN)、四方氮化硼(Tet-BN)和正交氮化硼(Ort-BN),它们分别具有立方(P4¯3m)、四方(4/)和正交()对称性。我们的密度泛函理论(DFT)计算表明,多孔结构的立方氮化硼、四方氮化硼和正交氮化硼不仅在能量、动力学、热学和力学上是稳定的,它们甚至比一些已知相更稳定,如立方氮化硼(sc-BN)和六方氮化硼(Hp-BN)。所得的普氏比值表明,立方氮化硼和四方氮化硼结构是脆性材料,但正交氮化硼是韧性材料。对理想强度、杨氏模量和剪切模量的分析表明,所提出的新相均表现出相当大的力学各向异性。此外,电子能带结构和态密度的计算表明,它们都是具有宽间接带隙(约3 eV)的半导体。这项工作所获得的结果不仅确定了三种稳定的氮化硼多晶型物,还突出了一种以簇为构建单元来获得所需材料的自下而上的方法。