Klyamer Darya, Sukhikh Alexandr, Bonegardt Dmitry, Krasnov Pavel, Popovetskiy Pavel, Basova Tamara
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentiev Pr., 630090 Novosibirsk, Russia.
International Research Center of Spectroscopy and Quantum Chemistry, Siberian Federal University, 26 Kirensky St., 660074 Krasnoyarsk, Russia.
Micromachines (Basel). 2023 Sep 15;14(9):1773. doi: 10.3390/mi14091773.
Halogenated metal phthalocyanines are promising materials for the manufacture of active layers of chemiresistive sensors for the detection of various gases. Despite the high interest in such sensors, there are few systematic studies of the position of halogen substituents in phthalocyanine macroring on the chemiresistive response of their films to gases. In this work, we prepared and studied films of novel tetrachlorosubstituted vanadyl phthalocyanine derivatives with Cl substituents in the peripheral (VOPcCl-p) and nonperipheral (VOPcCl-np) positions of the phthalocyanine ring as active layers of chemiresistive sensors to reveal the effect of the position of substituents on their structure and sensor response to low concentrations of NH. It was shown that the films of VOPcCl-p exhibited a noticeably higher sensor response to NH than the VOPcCl-np ones. The limit of detection of NH was 0.7 ppm. The sensing layers demonstrated a reversible sensor response at room temperature with fairly low response/recovery times. It was also demonstrated that NH can be detected in the presence of various interfering gases (CO and H) and some volatile organic vapors, as well as in a mixture of gases with a composition close to exhaled air.
卤化金属酞菁是用于制造用于检测各种气体的化学电阻传感器活性层的有前途的材料。尽管对这类传感器有很高的兴趣,但关于酞菁大环中卤素取代基的位置对其薄膜对气体的化学电阻响应的影响,系统研究却很少。在这项工作中,我们制备并研究了新型四氯取代钒酞菁衍生物的薄膜,其氯取代基位于酞菁环的外围(VOPcCl-p)和非外围(VOPcCl-np)位置,作为化学电阻传感器的活性层,以揭示取代基位置对其结构和对低浓度NH的传感器响应的影响。结果表明,VOPcCl-p薄膜对NH的传感器响应明显高于VOPcCl-np薄膜。NH的检测限为0.7 ppm。传感层在室温下表现出可逆的传感器响应,响应/恢复时间相当短。还证明了在存在各种干扰气体(CO和H)和一些挥发性有机蒸汽的情况下,以及在成分接近呼出空气的混合气体中,都可以检测到NH。