Lv Naixia, Ran Hongshun, Zhang Jinrui, Yin Jie, Zhang Yuan, Li Hongping, Zhu Linhua
College of Biology and Chemistry, Minzu Normal University of Xingyi, Xingyi, 562400, P. R. China.
Institute for Energy Research, School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China.
Phys Chem Chem Phys. 2024 Jan 17;26(3):2509-2518. doi: 10.1039/d3cp04963a.
Single-atom catalysts (SACs) have attracted great attention for various chemical reactions because of their strong activity, high metal utilization ratio, and low cost. Here, by using the density functional theory (DFT) method, the stability of a single VIII-group metal atom (M = Ni, Pd, Pt) anchored on the defective hexagonal boron nitride (h-BN) sheet and its possible application in oxidative desulfurization (ODS) are investigated. Calculations show that the stability of the single M atom embedded in the h-BN surface with B and N vacancies is strikingly enhanced compared to that on the perfect h-BN surface. The catalytic activities of the defective h-BN-supported single metal atom are further studied by the activation of molecular oxygen and subsequent oxidation of dibenzothiophene (DBT). O is activated to the super-oxo state with large interaction energies on three M/V surfaces. However, among the three M/V surfaces, only Pt/V performs efficient activation of O. The oxidation of DBT proceeds in two steps; the rate-determining step is the initial step, in which activated O oxidizes DBT to produce sulfoxide. By comparing the energy barrier in the first reaction step, both Ni/V and Pt/V are revealed as promising candidates for the ODS reaction.
单原子催化剂(SACs)因其强大的活性、高金属利用率和低成本而在各种化学反应中备受关注。在此,通过使用密度泛函理论(DFT)方法,研究了锚定在缺陷六方氮化硼(h-BN)片上的单个VIII族金属原子(M = Ni、Pd、Pt)的稳定性及其在氧化脱硫(ODS)中的可能应用。计算表明,与完美h-BN表面相比,嵌入具有B和N空位的h-BN表面的单个M原子的稳定性显著增强。通过分子氧的活化以及随后二苯并噻吩(DBT)的氧化,进一步研究了缺陷h-BN负载的单金属原子的催化活性。在三个M/V表面上,O被活化成具有大相互作用能的超氧态。然而,在这三个M/V表面中,只有Pt/V能有效活化O。DBT的氧化分两步进行;速率决定步骤是初始步骤,其中活化的O将DBT氧化生成亚砜。通过比较第一个反应步骤中的能垒,Ni/V和Pt/V均被揭示为ODS反应的有前景的候选者。